Výsledky vyhledávání - "Gil Hwan Son"

Ge Implantation to Improve Crystallinity and Productivity for Solid Phase Epitaxy Prepared by Atomic Mass Unit Cross Contamination-Free Technique

Autor: Chang Hun Lee, Ju Hee Noh, Hyeon Deok Lee, Young Sub You, Seok Jae Kim, Kong Soo Lee, Yong Woo Hyung, Gil Hwan Son, Daehan Yoo, Jae Jong Han, Yong Kwon Kim

Publikováno v: Japanese Journal of Applied Physics. 45:L1193-L1196

Germanium (Ge) ion implantation was investigated for crystallinity enhancement during solid phase epitaxial (SPE) regrowth. Electron back-scatter diffraction (EBSD) measurement showed numerical increase of 19% of (100) signal, which might be due to t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2547d8a425a81e40f7be241827c62f43
https://doi.org/10.1143/jjap.45.l1193

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