Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Gil Heyun Choi"'
Autor:
Timothy Basford, Charles Briscoe Larow, Rakesh Ranjan, Hyunchul Sagong, Gil Heyun Choi, Hwa-Sung Rhee, David J. Moreau, Pavitra Ramadevi Perepa, Maihan Nguyen, Ki-Don Lee, Minhyo Kang, Bong Ki Lee, Carolyn Cariss-Daniels, M. Shahriar Rahman, Colby Callahan
Publikováno v:
IRPS
Basic Reliability of IO FinFET is studied with various process options and extensive trap density investigation. It is observed that the NBTI margin on High Performance IO pFET is lowered by additional treatment to maintain the taller Fin profile. Tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a8c4110697aa876f94784c46bfcce66
https://doi.org/10.1109/irps45951.2020.9129066
https://doi.org/10.1109/irps45951.2020.9129066
Publikováno v:
Computers & Chemical Engineering. 61:20-29
Plasma etching processes have a potentially large number of sensor variables to be utilized, and the number of the sensor variables is growing due to advances in real-time sensors. In addition, the sensor variables from plasma sensors require additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd7ff69323ca2be6e6f9278e4af0f274
https://doi.org/10.1016/j.compchemeng.2013.09.016
https://doi.org/10.1016/j.compchemeng.2013.09.016
Autor:
Hyun-Su Kim, U-In Chung, Byung Il Ryu, Sung-Tae Kim, Seong Hwee Cheong, Gil Heyun Choi, Sug-Woo Jung, Jong-Ho Yun, Eun Ji Jung, Joo Tae Moon, Byung Hee Kim
Publikováno v:
Microelectronic Engineering. 82:449-453
The nickel/cobalt bilayer salicidation technology which enables an agglomeration-free silicidation even on narrow-line poly gate was investigated and described in detail. Si/Ni/Co and Si/Co/Ni bilayer stack were evaluated and the effect of thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14eee12ab93edf541e84e9301da4b27a
https://doi.org/10.1016/j.mee.2005.07.041
https://doi.org/10.1016/j.mee.2005.07.041
Publikováno v:
Japanese Journal of Applied Physics. 42:4245-4248
TiN films were deposited by the atomic layer deposition (ALD) method using either tetrakisdimethylaminotitanium (TDMAT) or tetrakisdiethylaminotitanium (TDEAT) as the Ti precursor and NH3 as the reactant gas. The TiN films deposited using TDMAT showe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::112763fef050def82bd5974c247f6932
https://doi.org/10.1143/jjap.42.4245
https://doi.org/10.1143/jjap.42.4245
Autor:
E. S. Jung, Jeongjin Lee, Seung-yoon Lee, Chan Hwang, SeungHwa Oh, Gil-heyun Choi, Ho-Kyu Kang
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
In this paper, set of wafers with separated processes was prepared and overlay measurement result was compared in two methods; IBO and DBO. Based on the experimental result, theoretical approach of relationship between overlay mark deformation and ov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::951232ee1421b288272407b5cc049323
https://doi.org/10.1117/12.2046583
https://doi.org/10.1117/12.2046583
Publikováno v:
Journal of Materials Science. 31:1663-1668
The longitudinal, ρ∥, and transverse, ρ⊥, resistivities have been measured in Sb-InSb eutectic alloys unidirectionally solidified over a range of growth rates, 1.2×10−4 to 1.2×10−1 cm s−1. The measured resistivities differ from the theo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b5bf160c9e038d4d6bf7e45f3ac4cc3
https://doi.org/10.1007/bf00357879
https://doi.org/10.1007/bf00357879
Autor:
Ju Young Yun, Gil Heyun Choi, Sang Bom Kang, U In Chung, Jung-Hun Seo, Joo Tae Moon, Jong-Myeong Lee, Byung Hee Kim
Publikováno v:
Japanese Journal of Applied Physics. 42:1874-1876
The contact resistance between Ti/TiN and a Ru electrode in metal-1/plate contacts of ruthenium insulator silicon (RIS) capacitor is investigated. When physical vapor deposition (PVD) Ti/TiN was used as a barrier metal for the metal contact process,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe303fc7d69e4f726dff0dda99073f46
https://doi.org/10.1143/jjap.42.1874
https://doi.org/10.1143/jjap.42.1874
Autor:
Kyu-hee Han, Jong-Myeong Lee, Ok-Hee Park, Ho-Kyu Kang, Jang-Hee Lee, Sang Hoon Ahn, Gil-heyun Choi, Viet Ha Nguyen, Chilhee Chung, Tae-Soo Kim
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
Cu/ULK(k=2.5) dual Damascene back end of line(BEOL) dielectric degradation was studied with respect to post Cu CMP delay prior to dielectric diffusion barrier deposition. The threshold of the delay time was observed beyond which line-to-line leakage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d95f46778769806a005822dd3552456
https://doi.org/10.1109/iitc.2012.6251653
https://doi.org/10.1109/iitc.2012.6251653
Autor:
Yeong-lyeol Park, Ki-Young Yun, Jiwoong Sue, Kwang-jin Moon, Chilhee Chung, So-Young Lee, Jin-ho An, Gil-heyun Choi, Byung-lyul Park, Ho-Jun Lee, Ho-Kyu Kang, Do-Sun Lee
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
Stresses induced by the large volume of Cu in Through Silicon Vias (TSV) can result in global/local Cu extrusion which may affect reliability in 3D chip stacking technologies beyond the 28 nm node for high performance mobile devices. In this work, TS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21b198e77574825ebd19eef96489ce54
https://doi.org/10.1109/iitc.2012.6251586
https://doi.org/10.1109/iitc.2012.6251586
Autor:
Gil Heyun Choi, Jang-Hee Lee, Woo Sung Jeon, Sang-Don Nam, Byeong-Hee Kim, Si-Young Choi, Chilhee Chung, Gyeong-Hee Kim, Sang Hoon Ahn, Insun Jung, Kyu-hee Han, Ho-Kyu Kang
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
Robust p-SiOCH was deposited in a PECVD reactor using Si precursor with Si-C-C-Si bond structure. It achieved its elastic modulus of 8.4GPa at k=2.55, comparable to the reference silica-based p-SiOCH that has been widely evaluated among the major chi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d27d2e9be0e3836cd6feb0b16da297e5
https://doi.org/10.1109/iitc.2011.5940317
https://doi.org/10.1109/iitc.2011.5940317