Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Gil Han Park"'
Autor:
J. B. Lam, Jerzy S. Krasinski, T. Sugahara, S. K. Shee, J. J. Song, B. D. Little, Hua-Shuang Kong, Y. H. Kwon, G. E. Bulman, Gordon Gainer, Gil Han Park, S. Bidnyk, S.J. Hwang
Publikováno v:
physica status solidi (a). 183:105-109
We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. Lasing modes of a single microcavity were examined from 20 to 300 K and gain mechanisms were compared to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7f79f0dd5c9e9c050b602f028adb46d
https://doi.org/10.1002/1521-396x(200101)183:1<105::aid-pssa105>3.0.co
https://doi.org/10.1002/1521-396x(200101)183:1<105::aid-pssa105>3.0.co
Autor:
J. J. Song, B.D Little, Sang Kee Shee, Y. H. Kwon, J. B. Lam, G. H. Gainer, Gil Han Park, S.J. Hwang
Publikováno v:
Journal of Crystal Growth. 221:373-377
Optically pumped stimulated emission (SE) and time-resolved photoluminescence (TRPL) of InGaN/(In)GaN multiple quantum wells (MQWs) grown by low-pressure metalorganic chemical vapor deposition (MOCVD) were systemically studied as a function of well a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b065e0333c3fccf2e96b922ad02b8b64
https://doi.org/10.1016/s0022-0248(00)00716-8
https://doi.org/10.1016/s0022-0248(00)00716-8
Autor:
Hyung-Kun Kim, Gil-Han Park, Young-Jin Lee, Grigory Onushkin, Jung-Ja Yang, Joong-Kon Son, Yongjo Park
Publikováno v:
IEEE Photonics Technology Letters. 21:33-35
The structure of a single light-emitting diode (LED) chip for operation under high voltage alternating current (ac) conditions was proposed. The chip was designed and fabricated as an integrated circuit with several isolated LED structures grown on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3b4a55155b43d5c84dcaaa7e7e7f798
https://doi.org/10.1109/lpt.2008.2008204
https://doi.org/10.1109/lpt.2008.2008204
Autor:
Gil Han Park, Jin-Joo Song
This project provided training for graduate students in a wide variety of areas related to III-nitride research: epitaxial growth using MOCVD and MBE, optical and electrical characterization, post-growth processing and device fabrication. This traini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7a47986530607503fcc56b97c5a0a03
https://doi.org/10.21236/ada397734
https://doi.org/10.21236/ada397734
Autor:
Jin-Joo Song, Gil Han Park
This project provided funding for instrumentation that enhanced Oklahoma State University's research capabilities and strengthened our existing DoD-sponsored programs in the areas of semiconductor materials and device research, especially for MOCVD,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60133d4fc62693c7cd49d3fc372c1055
https://doi.org/10.21236/ada397733
https://doi.org/10.21236/ada397733
Autor:
C. K. Choi, Gil-Han Park, Yia-Chung Chang, Y. H. Kwon, Jin-Joo Song, Jerzy S. Krasinski, Girish S. Setlur
Publikováno v:
SPIE Proceedings.
The non-equilibrium carrier dynamics in GaN epilayer for carrier densities ranging from 4 X 1017 to 1019 cm-3 at 10 K was studied by femtosecond pump-probe transmission spectroscopy. Spectral hole burning was initially peaked roughly at the excitatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cc07228792e2a6353e24e9c87bdd8d8
https://doi.org/10.1117/12.424723
https://doi.org/10.1117/12.424723
Autor:
Seong-Bum Seo, Kyeong-Ik Min, Gil-Han Park, Min-Ki Kwon, Il-Kyu Park, Jeomoh Kim, Seong-Ju Park, Ja-Yeon Kim
Publikováno v:
Journal of Applied Physics. 102:073115
We report on the effect of the position of the Si delta-doped layer within a GaN barrier layer on the optical properties of a InGaN∕GaN single quantum well (SQW) with an emission wavelength of 374nm. When the Si delta-doped layer was very close to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7431b61ccb5cd607ca7c6958e4be0435
https://doi.org/10.1063/1.2794714
https://doi.org/10.1063/1.2794714
Autor:
Onushkin, Grigory A., Young-Jin Lee, Jung-Ja Yang, Hyung-Kun Kim, Joong-Kon Son, Gil-Han Park, YongJo Park
Publikováno v:
IEEE Photonics Technology Letters; 1/1/2009, Vol. 21 Issue 1, p33-35, 3p