Zobrazeno 1 - 10
of 3 543
pro vyhledávání: '"Gil, B."'
Autor:
Plo, J., Pershin, A., Li, S., Poirier, T., Janzen, E., Schutte, H., Tian, M., Wynn, M., Bernard, S., Rousseau, A., Ibanez, A., Valvin, P., Desrat, W., Michel, T., Jacques, V., Gil, B., Kaminska, A., Wan, N., Edgar, J. H., Gali, A., Cassabois, G.
Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the b
Externí odkaz:
http://arxiv.org/abs/2405.20837
Autor:
Clua-Provost, T., Mu, Z., Durand, A., Schrader, C., Happacher, J., Bocquel, J., Maletinsky, P., Fraunié, J., Marie, X., Robert, C., Seine, G., Janzen, E., Edgar, J. H., Gil, B., Cassabois, G., Jacques, V.
The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understandin
Externí odkaz:
http://arxiv.org/abs/2404.14155
Autor:
Myungkoo Kang, Rashi Sharma, Cesar Blanco, Daniel Wiedeman, Quentin Altemose, Patrick E. Lynch, Gil B. J. Sop Tagne, Yifei Zhang, Mikhail Y. Shalaginov, Cosmin-Constantin Popescu, Brandon M. Triplett, Clara Rivero-Baleine, Casey M. Schwarz, Anuradha M. Agarwal, Tian Gu, Juejun Hu, Kathleen A. Richardson
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract Ge–Sb–Se–Te chalcogenides, namely Se-substituted Ge–Sb–Te, have been developed as an alternative optical phase change material (PCM) with a high figure-of-merit. A need for the integration of such new PCMs onto a variety of photoni
Externí odkaz:
https://doaj.org/article/8048acebe74640ee8503b0e232f0a69e
Autor:
Clua-Provost, T., Durand, A., Mu, Z., Rastoin, T., Fraunié, J., Janzen, E., Schutte, H., Edgar, J. H., Seine, G., Claverie, A., Marie, X., Robert, C., Gil, B., Cassabois, G., Jacques, V.
Publikováno v:
Phys. Rev. Lett. 131, 126901 (2023)
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplif
Externí odkaz:
http://arxiv.org/abs/2307.06774
Autor:
Janzen, E., Schutte, H., Plo, J., Rousseau, A., Michel, T., Desrat, W., Valvin, P., Jacques, V., Cassabois, G., Gil, B., Edgar, J. H.
The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the chang
Externí odkaz:
http://arxiv.org/abs/2306.13358
Autor:
Shima, K., Cheng, T. S., Mellor, C. J., Beton, P. H., Elias, C., Valvin, P., Gil, B., Cassabois, G., Novikov, S. V., Chichibu, S. F.
Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from ambiguous signals due to simple light scattering and resonant Raman s
Externí odkaz:
http://arxiv.org/abs/2305.09952
Autor:
Durand, A., Clua-Provost, T., Fabre, F., Kumar, P., Li, J., Edgar, J. H., Udvarhelyi, P., Gali, A., Marie, X., Robert, C., Gérard, J. M., Gil, B., Cassabois, G., Jacques, V.
Publikováno v:
Phys. Rev. Lett. 131, 116902 (2023)
Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate that the el
Externí odkaz:
http://arxiv.org/abs/2304.12071
Autor:
Udvarhelyi, P., Clua-Provost, T., Durand, A., Li, J., Edgar, J. H., Gil, B., Cassabois, G., Jacques, V., Gali, A.
The boron-vacancy spin defect ($\text{V}_\text{B}^{-}$) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the q
Externí odkaz:
http://arxiv.org/abs/2304.00492
Autor:
Kumar, P., Fabre, F., Durand, A., Clua-Provost, T., Li, J., Edgar, J. H., Rougemaille, N., Coraux, J., Marie, X., Renucci, P., Robert, C., Robert-Philip, I., Gil, B., Cassabois, G., Finco, A., Jacques, V.
Publikováno v:
Phys. Rev. Applied 18, L061002 (2022)
Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with negativel
Externí odkaz:
http://arxiv.org/abs/2207.10477