Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Gijs Brouwers"'
Autor:
Marie-Laure David, David P. Brunco, Brice De Jaeger, Luc Lajaunie, Jerome Mitard, Laurent Souriau, Mireia Bargallo Gonzalez, Eddy Simoen, Gijs Brouwers, Shawn G. Thomas, Frederick Leys, Marc Meuris, Nyles Cody, Geert Eneman, Rui Yang
Publikováno v:
physica status solidi c. 6:1912-1917
The electrical impact of threading dislocations in strained-germanium (s-Ge) grown on a strain-relaxed Si0.2Ge0.8 buffer is investigated by means of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p+n and n+p junctions fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c65fbdec374f38f3504c83430a2298a
https://doi.org/10.1002/pssc.200881446
https://doi.org/10.1002/pssc.200881446
Autor:
Jozefien Goossens, Gijs Brouwers, Marie-Laure David, Alessandra Satta, Frédéric Pailloux, Marc Meuris, Eddy Simoen, Trudo Clarysse, Brigitte Parmentier, Wilfried Vandervorst
Publikováno v:
Materials Science in Semiconductor Processing. 11:368-371
The impact of the Ge pre-amorphization conditions on shallow B profiles, resulting from a 1 keV implantation in n-type Ge and a 500 °C 1 min rapid thermal anneal, is investigated. In general, an increase of the sheet resistance with lower Ge energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ac669775221b3e70b390ec6ff5be256
https://doi.org/10.1016/j.mssp.2008.09.006
https://doi.org/10.1016/j.mssp.2008.09.006
Autor:
Gijs Brouwers, Eddy Simoen, B. De Jaeger, Geert Eneman, Marc Meuris, M. Bargallo Gonzalez, Nyles Cody, Laurent Souriau, Shawn G. Thomas, Jerome Mitard, David P. Brunco
Publikováno v:
Materials Science in Semiconductor Processing. 11:364-367
It is shown that the high density of threading dislocations (TDs) and, more specifically, the high density of point defects associated with it and present in our strained Ge epitaxial layers on a Si 0.2 Ge 0.8 relaxed buffer layer degrades the mobili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c9c73e0812ae87827cc87ab5da7823
https://doi.org/10.1016/j.mssp.2008.08.002
https://doi.org/10.1016/j.mssp.2008.08.002