Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Giichi Marutsuki"'
Autor:
Akio Kaneta, Yoichi Kawakami, Giichi Marutsuki, Takashi Mukai, Yukio Narukawa, Daisuke Yamada
Publikováno v:
physica status solidi (c). 2:2728-2731
Spatial distribution of photoluminescence (PL) spectra has been assessed in violet light emitting InGaN single-quantum-well (SQW) structures by employing a scanning near-field optical microscope (SNOM) at room temperature. Clear correlation has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78814d74414f75050e314c9579c815fc
https://doi.org/10.1002/pssc.200461580
https://doi.org/10.1002/pssc.200461580
Autor:
Kunimichi Omae, A. Shikanai, Sg. Fujita, Giichi Marutsuki, Koichi Okamoto, Yoichi Kawakami, Takashi Mukai, Yukio Narukawa, Akio Kaneta
Publikováno v:
physica status solidi (b). 240:337-343
Optical properties induced by two major effects, potential fluctuation and piezoelectric fields, have been assessed to interpret the emission mechanism in low-dimensional nitride semiconductors because the former leads to the exciton/carrier localiza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f5f57efde5f14f1dfb008a8d3fabd1
https://doi.org/10.1002/pssb.200303427
https://doi.org/10.1002/pssb.200303427
Autor:
Yoichi Kawakami, Akio Kaneta, Giichi Marutsuki, Tomotsugu Mitani, Sg. Fujita, Yukio Narukawa, Takashi Mukai, G. Shinomiya
Publikováno v:
physica status solidi (a). 192:110-116
Electroluminescence (EL) mapping has successfully been performed for In x Ga 1-x N single quantum well (SQW)-based light emitting diodes (LEDs) by employing scanning near-field optical microscopy (SNOM) at room temperature. The relative EL intensity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b6039a84df167344bf92e27ba0d97f9
https://doi.org/10.1002/1521-396x(200207)192:1<110::aid-pssa110>3.0.co
https://doi.org/10.1002/1521-396x(200207)192:1<110::aid-pssa110>3.0.co
Autor:
Koichi Okamoto, Sg. Fujita, Yoshinori Nakagawa, Giichi Marutsuki, Takashi Mukai, G. Shinomiya, Akio Kaneta, Yoichi Kawakami
Publikováno v:
physica status solidi (b). 228:153-156
Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1281c1857dae55c457d6f60e4dd5f582
https://doi.org/10.1002/1521-3951(200111)228:1<153::aid-pssb153>3.0.co
https://doi.org/10.1002/1521-3951(200111)228:1<153::aid-pssb153>3.0.co
Autor:
Takashi Mukai, Giichi Marutsuki, Takashi Mutoh, Yoichi Kawakami, Yukio Narukawa, Shigeo Fujita, Akio Kaneta
Publikováno v:
Applied Physics Letters. 83:3462-3464
Precise identification of recombination dynamics based on local, radiative, and nonradiative recombination has been achieved at room temperature in a blue-light-emitting InxGa1−xN/GaN single-quantum-well structure by comparing the photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e6fb78046260d6a1529253910433648
https://doi.org/10.1063/1.1620677
https://doi.org/10.1063/1.1620677
Autor:
Shigeo Fujita, Takashi Mukai, Yoichi Kawakami, Giichi Marutsuki, Koichi Okamoto, Akio Kaneta, Yukio Narukawa
Publikováno v:
APPLIED PHYSICS LETTERS. 81(23):4353-4355
Spatial distribution of photoluminescence (PL) with spectral, spatial, and/or time resolution has been assessed in an InxGa1−xN single-quantum-well (SQW) structure using scanning near-field optical microscope (SNOM) under illumination-collection mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee7c16a138c9e96db6bab3166533b48a
http://hdl.handle.net/2433/4601
http://hdl.handle.net/2433/4601
Autor:
Giichi Marutsuki, Koichi Okamoto, Fritz Henneberger, Shigeo Fujita, Yoichi Kawakami, Akio Kaneta, Fuminori Satou, Yukio Narukawa, Tsutomu Inoue, Takashi Mukai, Yoshihito Narita
Publikováno v:
SPIE Proceedings.
Scanning near field optical microscopy (SNOM) has been developed to assess the recombination mechanism in low-dimensional nitride semiconductors by employing spatial and temporal photoluminescence (PL) mapping under illumination-collection at cryogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5998a6512b7401212e8f36a345031ad
https://doi.org/10.1117/12.480854
https://doi.org/10.1117/12.480854