Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Giho Cha"'
Autor:
Kyu−Chil Park, Jun Hee Lee, Il Kwon Kim, Wan D. Kim, Byoung Hun Lee, Sang I. Lee, Giho Cha, Kyung Wook Lee, Gum J. Bae, Young Bum Koh
Publikováno v:
Japanese Journal of Applied Physics. 36:1912
In patterned wafer bonding process, the debonded area occurring at bonding interface results from the poor wafer flatness of patterned wafer or from the different bonding speed in each position of the wafer. By reducing pressure when bonding occurs a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4a75c99a59ad24eaf5aa65a3cb5f438
https://doi.org/10.1143/jjap.36.1912
https://doi.org/10.1143/jjap.36.1912
Autor:
Il-Kwon Kim, Woo-Tag Kang, Joon-Hee Lee, Sunil Yu, Sang-Cheol Lee, Kyehee Yeom, Yun-Gi Kim, Duck-Hyung Lee, Giho Cha, Byoung Hun Lee, Sang-In Lee, Kyu-Charn Park, Tae-Earn Shim, Chang-Gyu Hwang
Publikováno v:
International Electron Devices Meeting Technical Digest; 1996, p605-608, 4p
Publikováno v:
Japanese Journal of Applied Physics. 31:969
KOH anisotropic etching is used to study the interfaces of bonded silicon wafers. This method has been developed to detect the presence of bubbles or unbonded areas with a gap of less than 0.27 µm, which is the detection limit of an IR camera. Becau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d55267f476a324074fe6a949a9a5bc9
https://doi.org/10.1143/jjap.31.969
https://doi.org/10.1143/jjap.31.969
Publikováno v:
Japanese Journal of Applied Physics; April 1992, Vol. 31 Issue: 4 p969-969, 1p