Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Gihan T. Sayah"'
Autor:
Abdelhady Ellakany, Abdelhalim Zekry, Mohamed Abouelatta, Ahmed Shaker, Gihan T. Sayah, Mohamed M. El-Banna
Publikováno v:
Materials, Vol 16, Iss 7, p 2637 (2023)
Recently, nanowire detectors have been attracting increasing interest thanks to their advantages of high resolution and gain. The potential of using nanowire detectors is investigated in this work by developing a physically based model for Indium Pho
Externí odkaz:
https://doaj.org/article/f0c73a241bfb408a8b6d86347a27a362
Autor:
Mohamed Abouelatta-Ebrahim, Ahmed Shaker, Gihan T. Sayah, Christian Gontrand, Abdelhalim Zekry
Publikováno v:
Ain Shams Engineering Journal, Vol 6, Iss 2, Pp 501-509 (2015)
In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35 μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key device/process parameters of the device is performed using analytical approach and verified using
Externí odkaz:
https://doaj.org/article/f20ca87cb6874145ad69992a4acb245d
Autor:
Mohammed M. El-Banna, Ahmed Shaker, Mohamed Abouelatta, Gihan T. Sayah, Marwa S. Salem, Abdelhalim Zekry
Publikováno v:
Ain Shams Engineering Journal, Vol 12, Iss 3, Pp 3141-3155 (2021)
This paper aims to present a detailed systematic approach to identify the main design parameters of PIN power diodes. Firstly, the diode physical parameters are initialized using simple analytical equations. The second phase is the optimization of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1539267ef7b23cd902510c559e0d631
https://doi.org/10.1016/j.asej.2021.02.005
https://doi.org/10.1016/j.asej.2021.02.005
Autor:
Gihan T. Sayah
Publikováno v:
International Journal of Computer Applications. 150:14-18
paper, some techniques to enhance the performance of the tunneling field effect transistor (TFET) devices are studied. Two proposed techniques, which could be used simultaneously to improve the performance of TFET, are presented. The first technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a7e6ccc030865325e7d90a009f251cb
https://doi.org/10.5120/ijca2016911575
https://doi.org/10.5120/ijca2016911575
Publikováno v:
The Journal of Engineering. 2017:574-576
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe3cef6c3fe9ca173184a82900da9ce
https://doi.org/10.1049/joe.2017.0342
https://doi.org/10.1049/joe.2017.0342
Publikováno v:
IET Power Electronics. 7:2464-2471
In this study, we present an improved comprehensive model of power diodes. This model is based on the numerical solution of the ambipolar diffusion equation (ADE) by a modified finite difference method using MATLAB. The ADE is solved for all levels o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90945ed1520011d7a9adc4c73b9a21c4
https://doi.org/10.1049/iet-pel.2014.0014
https://doi.org/10.1049/iet-pel.2014.0014
Publikováno v:
IET Power Electronics. 7:724-735
In this work, a new SPICE model is developed for power thyristors, which contains amplifying gate and emitter-shorts. This model is based on the two-dimensional two-transistor circuit model of a thyristor. The authors use Gummel–Poon circuit model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87206301d9d0ea792e03bc2005c7658e
https://doi.org/10.1049/iet-pel.2013.0158
https://doi.org/10.1049/iet-pel.2013.0158
Autor:
Gihan T. Sayah, Abdelhalim Zekry
In this work a model is developed for the gate-cathode junction of a power thyristor containing an amplifying gate and emitter shorts. The geometry of this junction and the model parameters are defined and extracted according to a new methodology. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94abf0da6e06dc8f2feb211c393ac3af
https://doi.org/10.1115/1.802977.paper103
https://doi.org/10.1115/1.802977.paper103
Publikováno v:
Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442).
In this work a new SCR model is developed by applying the Gummel-Poon circuit model to the two-transistor configuration. This model naturally takes into consideration the high injection effects. Conductivity modulation is taken into consideration by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d6ba526d7f3b7dc7552d01eefc878d3
https://doi.org/10.1109/icm.2003.237929
https://doi.org/10.1109/icm.2003.237929