Zobrazeno 1 - 10
of 1 131
pro vyhledávání: '"Gies, C."'
In bilayers of semiconducting transition metal dichalcogenides, the twist angle between layers can be used to introduce a highly regular periodic potential modulation on a length scale that is large compared to the unit cell. In such structures, corr
Externí odkaz:
http://arxiv.org/abs/2201.10877
Autor:
Koulas-Simos, A., Buchgeister, J., Drechsler, M., Zhang, T., Laiho, K., Sinatkas, G., Xu, J., Lohof, F., Kan, Q., Zhang, R. K., Jahnke, F., Gies, C., Chow, W. W., Ning, C. Z., Reitzenstein, S.
Metallic nanocavity lasers provide important technological advancement towards even smaller integrable light sources. They give access to widely unexplored lasing physics in which the distinction between different operational regimes, like those of t
Externí odkaz:
http://arxiv.org/abs/2201.05680
Publikováno v:
Phys. Rev. B 98, 035434 (2018)
Monolayers of transition metal dichalcogenides (TMDCs) exhibit an exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in connection with weak dielectric screening. High densities of excited
Externí odkaz:
http://arxiv.org/abs/1804.08427
Autor:
Florian, M., Hartmann, M., Steinhoff, A., Klein, J., Holleitner, A., Finley, J. J., Wehling, T. O., Kaniber, M., Gies, C.
Publikováno v:
Nano Lett. 18, 2725 (2018)
The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer the field lines of the Coulomb interaction are screened
Externí odkaz:
http://arxiv.org/abs/1712.05607
Autor:
Gericke, F., Segnon, M., von Helversen, M., Hopfmann, C., Heindel, T., Schneider, C., Höfling, S., Kamp, M., Musiał, A., Porte, X., Gies, C., Reitzenstein, S.
Publikováno v:
New Journal of Physics 20, 023036 (2018)
We provide experimental and theoretical insight into single-emitter lasing effects in a quantum dot (QD)-microlaser under controlled variation of background gain provided by off-resonant discrete gain centers. For that purpose, we apply an advanced t
Externí odkaz:
http://arxiv.org/abs/1704.03902
Autor:
Kreinberg, S., Chow, W. W., Wolters, J., Schneider, C., Gies, C., Jahnke, F., Höfling, S., Kamp, M., Reitzenstein, S.
Publikováno v:
Light: Science & Applications 6, e17030 (2017)
Measured and calculated results are presented on the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime. The structures are based on high-finesse GaAs/AlAs micropillar cavities, each with an active m
Externí odkaz:
http://arxiv.org/abs/1610.04129
Autor:
Lichtmannecker, S., Florian, M., Reichert, T., Blauth, M., Bichler, M., Jahnke, F., Finley, J. J., Gies, C., Kaniber, M.
We report a combined experimental and theoretical study of non-conventional lasing from higher multi-exciton states of a few quantum dot-photonic crystal nanocavity. We show that the photon output is fed from saturable quantum emitters rather than a
Externí odkaz:
http://arxiv.org/abs/1602.03998
Publikováno v:
Phys. Rev. A 90, 033808 (2014)
We study an array of dissipative tunnel-coupled cavities, each interacting with an incoherently pumped two-level emitter. For cavities in the lasing regime, we find correlations between the light fields of distant cavities, despite the dissipation an
Externí odkaz:
http://arxiv.org/abs/1401.5776
Systematic study of carrier correlations in the electron-hole recombination dynamics of quantum dots
Autor:
Berstermann, T., Auer, T., Kurtze, H., Schwab, M., Yakovlev, D. R., Bayer, M., Wiersig, J., Gies, C., Jahnke, F., Reuter, D., Wieck, A. D.
The ground state carrier dynamics in self-assembled (In,Ga)As/GaAs quantum dots has been studied using time-resolved photoluminescence and transmission. By varying the dot design with respect to confinement and doping, the dynamics is shown to follow
Externí odkaz:
http://arxiv.org/abs/0706.3673
Autor:
Schwab, M., Kurtze, H., Auer, T., Berstermann, T., Bayer, M., Wiersig, J., Baer, N., Gies, C., Jahnke, F., Reithmaier, J. P., Forchel, A., Benyoucef, M., Michler, P.
The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAs-based micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a non-exponen
Externí odkaz:
http://arxiv.org/abs/cond-mat/0605728