Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Giedrius Mockevicius"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 796:114-117
Silicon material was irradiated with reactor neutrons, which unavoidably created clusters of defects. Spectral photo current measurements in the range from 0.5 eV up to 1.4 eV showed accumulation of the signal and long time relaxation behavior in som
Autor:
Vaidotas Kažukauskas, Neimantas Vainorius, Giedrius Mockevicius, J. Storasta, Juozas Vaitkus, Paulius Malinovskis, A. Mekys, Ernestas Žąsinas, Rokas Bondzinskas
Publikováno v:
Lithuanian Journal of Physics. 51:345-350
Deep level spectroscopy in neutron irradiated FZ and MCz Si was performed by extrinsic photoconductivity spectra measurements in the range of temperature of 18–120 K. The Lukovsky model was used, and the Gaussian distribution of deep level energy d