Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Giedrius Juška"'
Autor:
Kazimieras Badokas, Arūnas Kadys, Dominykas Augulis, Jūras Mickevičius, Ilja Ignatjev, Martynas Skapas, Benjaminas Šebeka, Giedrius Juška, Tadas Malinauskas
Publikováno v:
Nanomaterials, Vol 12, Iss 5, p 785 (2022)
The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire template
Externí odkaz:
https://doaj.org/article/db1f1d9cdcb24b888faa386d88c1cea2
Autor:
Alla Reznik, Yurii Shepelytskyi, I. Blevis, O. Semeniuk, P. Karasyuk, Giedrius Juška, Oleksandr Bubon
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:13941-13951
Although cadmium zinc telluride (CZT) is the most widely used room-temperature photoconductor for low flux radiation sensing, utilization of this promising material in high flux applications, like computed tomography is challenging, due to possible d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23a0ad8d58a41242e2a3cce776e90b00
https://doi.org/10.1007/s10854-018-9527-9
https://doi.org/10.1007/s10854-018-9527-9
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Scientific Reports
Scientific Reports
Presence of a signal lag is a bottle neck of performance for many non-crystalline materials, considered for dynamic radiation sensing. Due to inadequate lag-related temporal performance, polycrystalline layers of CdZnTe, PbI2, HgI2 and PbO are not pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c86488f626ae5454451c995d0aeb786
http://link.springer.com/article/10.1038/s41598-017-13697-2
http://link.springer.com/article/10.1038/s41598-017-13697-2
Publikováno v:
Organic Electronics. 47:9-13
The non-geminate recombination was investigated in TQ1:PC61BM:PC71BM (poly[[2,3-bis(3-octyloxyphenyl)-5,8-quinoxalinediyl]-2,5-thiophenediyl]:[6,6]-Phenyl-C61-butyric-acid-methyl-ester:[6,6]-Phenyl-C71-butyric-acid-methyl-ester) bulk heterojunctions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ded425adc789e186d062a660510f0c97
https://doi.org/10.1016/j.orgel.2017.04.030
https://doi.org/10.1016/j.orgel.2017.04.030
Autor:
Giedrius Juška, Kęstutis Arlauskas, Ernesta Bužavaitė, Indrė Urbanavičiūtė, Bronė Lenkevičiūtė, Albinas Žilinskas, Justina Dirsytė, Sigita Višniakova
Publikováno v:
Journal of Luminescence. 181:299-309
We report a synthesis of 37 new 1,8-naphthyridine based compounds having a non-planar bicyclic moiety (bicyclo[3.3.1]nonane, bicyclo[3.3.0]octane and camphor). We measured energetic characteristics (EHOMO=[−5.9; −5.4] eV, ELUMO=[−3.4; −2.4] e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8fd515a01b3a9728a6186bd34a3fd23
https://doi.org/10.1016/j.jlumin.2016.09.027
https://doi.org/10.1016/j.jlumin.2016.09.027
Autor:
Giedrius Juška, R. Tomasiunas, M. Mandl, T. Pilvi, Edvinas Radiunas, S. Taeger, I. Reklaitis, Martin Strassburg, R. Ritasalo
Publikováno v:
ICTON
We have deposited a series of ALD oxides HfO 2 , ZrO 2 , Ta 2 O 5 , Y 2 O 3 , SiO 2 , Al 2 O 3 within same reactor and prepared as GaN-MOS structure. A comprehensible diverse distribution of flat-band voltage depending on two different deposition tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3981a940e767f1ed46561069df5bbc1
https://doi.org/10.1109/icton.2019.8840230
https://doi.org/10.1109/icton.2019.8840230
Autor:
Arūnas Kadys, Sandra Stanionytė, Tadas Malinauskas, Ilja Ignatjev, Edvinas Radiunas, Jūras Mickevičius, Kazimieras Badokas, Giedrius Juška, Martynas Skapas
Publikováno v:
Journal of Physics D: Applied Physics. 54:205103
Remote epitaxy via graphene has recently attracted significant attention, since it provides the possibility to lift-off the grown epitaxial layer, reuse the substrate, and produce flexible devices. However, extensive research is still necessary to fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0842eba133facd6080921f7e5eabdcf7
https://doi.org/10.1088/1361-6463/abe500
https://doi.org/10.1088/1361-6463/abe500
Publikováno v:
Chemical Physics. 478:126-129
The extraction of the injected charge carriers by linearly increasing voltage (i-CELIV) is a promising method for separate analysis of the holes and electrons transport properties in the bulk heterojunction layers. We are demonstrating how to establi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac25179e9fcf116dfb0fb44fb5c6242b
https://doi.org/10.1016/j.chemphys.2016.04.005
https://doi.org/10.1016/j.chemphys.2016.04.005
Autor:
T. Pilvi, Tadas Malinauskas, Giedrius Juška, R. Tomašiūnas, Martin Strassburg, Edvinas Radiunas, Sandra Stanionytė, R. Ritasalo, S. Taeger, I. Reklaitis
Publikováno v:
Surface and Coatings Technology. 399:126123
Transition metal oxide films HfO2, ZrO2, Ta2O5, TiO2, Nb2O5, and Y2O3, together with Al2O3 and SiO2 for reference, were deposited by atomic layer deposition (ALD) and investigated. For all the films ALD process was performed within the same reactor a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e94376e18b4631bed501ce09b673c42
https://doi.org/10.1016/j.surfcoat.2020.126123
https://doi.org/10.1016/j.surfcoat.2020.126123
Autor:
J. O. Oelerich, K. Jandieri, A. V. Dvurechenskii, Florian Gebhard, Alla Reznik, S. D. Baranovskii, A. V. Nenashev, O. Semeniuk, V. V. Valkovskii, Giedrius Juška
Publikováno v:
Physical Review B. 98
Charge transport in disordered inorganic semiconductors is governed by the multiple trapping (MT) of carriers from delocalized states in the conduction band into localized traps in the band tail. Although it is well known that carrier mobility in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1620c8f55db95192038f7f9bacf910f
https://doi.org/10.1103/physrevb.98.035201
https://doi.org/10.1103/physrevb.98.035201