Zobrazeno 1 - 10
of 492
pro vyhledávání: '"Gibertini, P."'
Heracles: A HfO$\mathrm{_2}$ Ferroelectric Capacitor Compact Model for Efficient Circuit Simulations
Autor:
Fehlings, Luca, Ali, Md Hanif, Gibertini, Paolo, Gallicchio, Egidio A., Ganguly, Udayan, Deshpande, Veeresh, Covi, Erika
This paper presents a physics-based compact model for circuit simulations in a SPICE environment for HfO2-based ferroelectric capacitors (FeCaps). The model has been calibrated based on experimental data obtained from HfO2-based FeCaps. A thermal mod
Externí odkaz:
http://arxiv.org/abs/2410.07791
Superconductivity in few-layer semiconducting transition metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully-consistent th
Externí odkaz:
http://arxiv.org/abs/2409.11834
We predict that in InAs/GaSb nanowires with an inverted band alignment a transverse electric field induces a collapse of the hybridization gap, and a semimetal phase occurs. We use a self-consistent k.p approach and an adapted Bernevig-Hughes-Zhang m
Externí odkaz:
http://arxiv.org/abs/2409.00274
Recent experiments in twisted bilayer transition-metal dichalcogenides have revealed a variety of strongly correlated phenomena. To theoretically explore their origin, we combine here ab initio calculations with correlated model approaches to describ
Externí odkaz:
http://arxiv.org/abs/2404.07165
Autor:
Lin, Xiaohanwen, Wu, Fan, Lopéz-Paz, Sara A., von Rohr, Fabian O., Gibertini, Marco, Gutiérrez-Lezama, Ignacio, Morpurgo, Alberto F.
We investigate the c-direction conduction in CrSBr in the linear regime, not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity -- $10^8$ to $10^{11}$ times larger than in the a-
Externí odkaz:
http://arxiv.org/abs/2401.16931
Autor:
Yao, Fengrui, Multian, Volodymyr, Wang, Zhe, Ubrig, Nicolas, Teyssier, Jérémie, Wu, Fan, Giannini, Enrico, Gibertini, Marco, Gutiérrez-Lezama, Ignacio, Morpurgo, Alberto F.
In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recent experim
Externí odkaz:
http://arxiv.org/abs/2308.08355
Publikováno v:
Phys. Rev. Materials 8, 014007 (2024)
Hubbard-corrected density-functional theory has proven to be successful in addressing self-interaction errors in 3D magnetic materials. However, the effectiveness of this approach for 2D magnetic materials has not been extensively explored. Here, we
Externí odkaz:
http://arxiv.org/abs/2306.06286
Autor:
Margot, Florian, Lisi, Simone, Cucchi, Irène, Cappelli, Edoardo, Hunter, Andrew, Gutiérrez-Lezama, Ignacio, Ma, KeYuan, von Rohr, Fabian, Berthod, Christophe, Petocchi, Francesco, Poncé, Samuel, Marzari, Nicola, Gibertini, Marco, Tamai, Anna, Morpurgo, Alberto F., Baumberger, Felix
Publikováno v:
Nano Lett. 2023, 23 6433-6439
Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus fa
Externí odkaz:
http://arxiv.org/abs/2306.00749
Autor:
Wu, Fan, Gibertini, Marco, Watanabe, Kenji, Taniguchi, Takashi, Gutiérrez-Lezama, Ignacio, Ubrig, Nicolas, Morpurgo, Alberto F.
Transistors realized on 2D antiferromagnetic semiconductor CrPS$_4$ exhibit large magnetoconductance, due to magnetic-field-induced changes in magnetic state. The microscopic mechanism coupling conductance and magnetic state is not understood. We ide
Externí odkaz:
http://arxiv.org/abs/2304.12712
Autor:
Wu, Fan, Gibertini, Marco, Watanabe, Kenji, Taniguchi, Takashi, Gutiérrez-Lezama, Ignacio, Ubrig, Nicolas, Morpurgo, Alberto F.
Publikováno v:
Advanced Materials 2023
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor oper
Externí odkaz:
http://arxiv.org/abs/2301.10535