Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Gianpaolo Spadini"'
Publikováno v:
2010 International Conference on Simulation of Semiconductor Processes and Devices.
Memory elements existing and under research are compared for their suitability in computer memory applications. Cross point arrays of phase change elements with matched isolation devices are found to be particularly attractive and the challenge to mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ff86447a29af45038d2fc4311d9734a
https://doi.org/10.1109/sispad.2010.5604521
https://doi.org/10.1109/sispad.2010.5604521
Autor:
Sean Lee, Jonathan Strand, Hernan A. Castro, Stephen Tang, Jeremy Hirst, Johannes A. Kalb, Brett Klehn, Gianpaolo Spadini, DerChang Kau, Leung Nelson, Jack Wu, Nick Righos, Jinwook Lee, T. N. Langtry, Ilya V. Karpov, Kuo-Wei Chang, Aleshandre M. Diaz, Eddie Flores, Rick Dodge, Swetha Erra, Christina Papagianni
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
A novel scalable and stackable nonvolatile memory technology suitable for building fast and dense memory devices is discussed. The memory cell is built by layering a storage element and a selector. The storage element is a Phase Change Memory (PCM) c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73110ad3cdf3ae5fce1d937b562e9ac5
https://doi.org/10.1109/iedm.2009.5424263
https://doi.org/10.1109/iedm.2009.5424263
Autor:
Gianpaolo Spadini, Dipankar Pramanik
Publikováno v:
European Transactions on Telecommunications. 1:179-184
Process technologies developed for the fabrication of Application Specific Integrated Circuits must satisfy some unusual demands imposed by design automation and by fast turn around manufacturing. In this paper we will discuss some of the problems th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc62b4d67ce02ba2341ac898b10f5020
https://doi.org/10.1002/ett.4460010217
https://doi.org/10.1002/ett.4460010217
Autor:
J.P. Reifenberg, Sean Jong Lee, B.G. Johnson, S.J. Hudgens, Ilya V. Karpov, Semyon D. Savransky, Jingyan Zhang, DerChang Kau, David L. Kencke, Martin D. Giles, Gianpaolo Spadini
Publikováno v:
2007 IEEE International Electron Devices Meeting.
Phase change memory (PCM) research has largely focused on bulk properties to evaluate cell efficiency. Now both electrical and thermal interface resistances are characterized and shown to be critical for understanding power in a novel damascene-GST c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34a7eb99bafca3e4593615a85d5bd0d4
https://doi.org/10.1109/iedm.2007.4418936
https://doi.org/10.1109/iedm.2007.4418936
Autor:
Gianpaolo Spadini, Mukut Mitra, Ilya V. Karpov, DerChang Kau, Victor G. Karpov, Y. A. Kryukov
Publikováno v:
Applied Physics Letters. 92:173501
Experimental data on switching in phase change memory testify in favor of its underlying nucleation mechanism with field dependent nucleation barrier. Similar to the standard nucleation, switching occurs after exponentially long delay time when the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab8277a6e2788a5cc87cf8a83bda5367
https://doi.org/10.1063/1.2917583
https://doi.org/10.1063/1.2917583
Publikováno v:
Journal of Applied Physics. 102:124503
We present the data on temporal (t) drift of parameters in chalcogenide phase change memory that significantly complement the earlier published results. The threshold voltage Vth and the amorphous state resistance R are shown to drift as ΔVth∝v ln
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b113b5b1782a0e06d36379f476bfe44
https://doi.org/10.1063/1.2825650
https://doi.org/10.1063/1.2825650
Publikováno v:
Thin Solid Films. 68:315-332
The problem of determining the density of surface states at the Si-SiO2 interface from the quasi-static capacitance of a MOS capacitor is reconsidered in full detail. The errors introduced by the usual zero kelvin approximation are evaluated, an impr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::846f53b701125a6764678c570ac7d78a
https://doi.org/10.1016/0040-6090(80)90265-5
https://doi.org/10.1016/0040-6090(80)90265-5
Publikováno v:
SPIE Proceedings.
This paper presents a quick and accurate method for determining optical column misalignment and degree of telecentricity of a precision wafer stepper using computerized electrical techniques. The trend toward increasingly difficult device design rule
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6489b42a47fccdc97552a0bf06b50b8
https://doi.org/10.1117/12.963708
https://doi.org/10.1117/12.963708
Publikováno v:
SPIE Proceedings.
The typical pattern quality specifications for large lithography equipment (such as raster scan e-beam systems) and the industry standard pattern quality specifications for masks and reticles have grown to be quite different. The equipment manufactur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a997d35188617233e2d518b05136fac1
https://doi.org/10.1117/12.963714
https://doi.org/10.1117/12.963714
Publikováno v:
Advances in Resist Technology and Processing III.
A high resolution, easy to implement bilayer PMGI [poly[dimethylglutarimiden process has been developed for producing polysilicon gates for high density CMOS. One micron wide, proximity effect free, and very uniform poly lines were obtained. Unbiased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e81b2b6f727b0b8e8cfbb44021615d68
https://doi.org/10.1117/12.963660
https://doi.org/10.1117/12.963660