Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Gianpaolo Romano"'
Autor:
Assuntina Cembalo, Rosaria Lombardo, Eric J. Beh, Gianpaolo Romano, Michele Ferrucci, Francesca M. Pisano
Publikováno v:
Stats, Vol 4, Iss 1, Pp 146-161 (2021)
This paper explores climate changes in Italy over the last 30 years. The data come from the European observation gridded dataset and are concerned with the temperature throughout the country. We focus our attention on two Italian regions (Lombardy in
Externí odkaz:
https://doaj.org/article/e0a9bff9d30e4d0692967520754dda9c
Autor:
Luca Maresca, Giuseppe De Caro, Gianpaolo Romano, Michele Riccio, Giovanni Breglio, Andrea Irace, Laura Bellemo, Rossano Carta, Nabil El Baradai
Publikováno v:
Energies, Vol 11, Iss 4, p 832 (2018)
Silicon power diodes are used to design different types of electrical energy systems. Their performance has been improved substantially, as a result of a concentrated research efforts that have taken place in the last two decades. They are considered
Externí odkaz:
https://doaj.org/article/a503b02489b94f23a88349595a07fe43
Autor:
Luca Salvatore De Santo, Michele Torella, Gianpaolo Romano, Ciro Maiello, Marianna Buonocore, Ciro Bancone, Alessandro Della Corte, Nicola Galdieri, Gianantonio Nappi, Cristiano Amarelli
Publikováno v:
PLoS ONE, Vol 10, Iss 5, p e0120813 (2015)
Implications of Cardiac troponin (cTnI) release after cardiac transplantation are still unclear. This study disclosed risk factors and prognostic implication of cTnI early levels in a single centre cohort operated on between January 1999 and December
Externí odkaz:
https://doaj.org/article/1cbbed36e03f43c3b19858d6b7be0c50
Autor:
Kaloyan Naydenov, Nazareno Donato, Florin Udrea, Andrei Mihaila, Gianpaolo Romano, Stephan Wirths, Lars Knoll
Publikováno v:
Materials Science Forum. 1062:627-631
This work presents for the first time a comparative numerical study on the performance of planar 3.3 kV SiC MOSFETs during clamped and unclamped inductive switching for various cell layouts and pitches. It is demonstrated that despite its larger on-s
Autor:
Nazareno Donato, Kaloyan Naydenov, Florin Udrea, Andrei Mihaila, Gianpaolo Romano, Stephan Wirths, Lars Knoll
Publikováno v:
Materials Science Forum. 1062:632-636
In this manuscript, the short circuit (SC) capability of 1.2 kV vertical double diffused SiC MOSFET with different layout topologies is investigated. 3D finite element electro-thermal simulations have been carried out in order to assess the performan
Autor:
Lars Knoll, Giovanni Alfieri, Gianpaolo Romano, Andrei Mihaila, Yulieth Arango, Moritz Wehrle, Vinoth Sundaramoorthy, Stephan Wirths
Publikováno v:
Materials Science Forum. 1062:383-388
Recently high-k gate dielectrics for SiC power MOSFETs attracted increasing research interest thanks to promising results related to improved specific channel resistances and threshold voltage stability. We investigated high-k gate stacks for 1.2kV a
Autor:
Stephan Wirths, Giovanni Alfieri, Gianpaolo Romano, Edoardo Ceccarelli, Yulieth Arango, Andrei Mihaila, Lars Knoll
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Publikováno v:
Proceedings of the 8th International Conference on Vehicle Technology and Intelligent Transport Systems.
Publikováno v:
Journal of Clinical Medicine; Volume 10; Issue 24; Pages: 5982
Journal of Clinical Medicine, Vol 10, Iss 5982, p 5982 (2021)
Journal of Clinical Medicine
Journal of Clinical Medicine, Vol 10, Iss 5982, p 5982 (2021)
Journal of Clinical Medicine
Background: The aim of this study was to evaluate the performance of an automated COVID-19 detection method based on a transfer learning technique that makes use of chest computed tomography (CT) images. Method: In this study, we used a publicly avai
Autor:
Nazareno Donato, Gianpaolo Romano, K. Naydenov, Andrei Mihaila, Lars Knoll, S. Wirths, Florin Udrea
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper presents for the first time a combined experimental/numerical study of the electro-thermal surge current behaviour of 6.5kV SiC MOSFETs for various cell layouts. By means of a matched TCAD model it is demonstrated that the circular (and he