Zobrazeno 1 - 10
of 539
pro vyhledávání: '"Giannazzo Filippo"'
Autor:
Fiorenza, Patrick, Zignale, Marco, Camalleri, Marco, Scalia, Laura, Zanetti, Edoardo, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio
In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide (NO) on the properties of SiO2/4H-SiC interfaces in n-channel lateral MOSFETs are investigated, with a special focus on the modifications of the energy p
Externí odkaz:
http://arxiv.org/abs/2410.21235
Autor:
Fiorenza, Patrick, Zignale, Marco, Zanetti, Edoardo., Alessandrino, Mario S., Carbone, Beatrice, Guarnera, Alfio, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio
This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. The suitability of scanning probe methods based on atomic force microsco
Externí odkaz:
http://arxiv.org/abs/2407.13370
Autor:
Greco, Giuseppe, Fiorenza, Patrick, Schilirò, Emanuela, Bongiorno, Corrado, Di Franco, Salvatore, Coulon, Pierre-Marie, Frayssinet, Eric, Bartoli, Florian, Giannazzo, Filippo, Alquier, Daniel, Cordier, Yvon, Roccaforte, Fabrizio
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy (C-AFM) of
Externí odkaz:
http://arxiv.org/abs/2304.11680
Autor:
Greco, Giuseppe, Fiorenza, Patrick, Giannazzo, Filippo, Bongiorno, Corrado, Moschetti, Maurizio, Bottari, Cettina, Alessandrino, Mario Santi, Iucolano, Ferdinando, Roccaforte, Fabrizio
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations under stre
Externí odkaz:
http://arxiv.org/abs/2212.06442
Autor:
Sfuncia, Gianfranco, Nicotra, Giuseppe, Giannazzo, Filippo, Pécz, Béla, Gueorguiev, Gueorgui Kostov, Kakanakova-Georgieva, Anelia
Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC interface by
Externí odkaz:
http://arxiv.org/abs/2206.10247
Autor:
Milazzo, Simone, Greco, Giuseppe, Di Franco, Salvatore, Fiorenza, Patrick, Giannazzo, Filippo, Bongiorno, Corrado, Gervasi, Leonardo, Mirabella, Salvatore, Iucolano, Ferdinando, Roccaforte, Fabrizio
Publikováno v:
In Applied Surface Science 15 January 2025 679
Autor:
Schilirò, Emanuela, Nigro, Raffaella Lo, Panasci, Salvatore E., Agnello, Simonpietro, Cannas, Marco, Gelardi, Franco M., Roccaforte, Fabrizio, Giannazzo, Filippo
In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L) $MoS_2$ membrane
Externí odkaz:
http://arxiv.org/abs/2108.09542
Publikováno v:
In Materials Science in Semiconductor Processing May 2024 174
Autor:
Vivona, Marilena, Greco, Giuseppe, Spera, Monia, Fiorenza, Patrick, Giannazzo, Filippo, La Magna, Antonino, Roccaforte, Fabrizio
Publikováno v:
J. Phys. D: Appl. Phys. 54, (2021) 445107
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The for
Externí odkaz:
http://arxiv.org/abs/2102.08927
Autor:
Galizia, Bruno, Fiorenza, Patrick, Bongiorno, Corrado, Pécz, Béla, Fogarassy, Zsolt, Schilirò, Emanuela, Giannazzo, Filippo, Roccaforte, Fabrizio, Nigro, Raffaella Lo
Publikováno v:
In Microelectronic Engineering 1 January 2024 283