Zobrazeno 1 - 10
of 2 292
pro vyhledávání: '"Giannazzo, F"'
Autor:
Fiorenza, P., Cordiano, F., Alessandrino, S. M., Russo, A., Zanetti, E., Saggio, M., Bongiorno, C., Giannazzo, F., Roccaforte, F.
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
Externí odkaz:
http://arxiv.org/abs/2410.19545
Autor:
Schilirò, E., Panasci, S. E., Mio, A. M., Nicotra, G., Agnello, S., Pecz, B., Radnoczi, G. Z., Deretzis, I., La Magna, A., Roccaforte, F., Nigro, R. Lo, Giannazzo, F.
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD pro
Externí odkaz:
http://arxiv.org/abs/2305.07933
Autor:
Giannazzo, F., Panasci, S. E., Schilirò, E., Greco, G., Roccaforte, F., Sfuncia, G., Nicotra, G., Cannas, M., Agnello, S., Frayssinet, E., Cordier, Y., Michon, A., Koos, A., Pécz, B.
The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sap
Externí odkaz:
http://arxiv.org/abs/2304.12213
Autor:
Panasci, S. E., Schilirò, E., Migliore, F., Cannas, M., Gelardi, F. M., Roccaforte, F., Giannazzo, F., Agnello, S.
Publikováno v:
Appl. Phys. Lett. 119, 093103 (2021)
The gold-assisted exfoliation is a very effective method to produce large-area ($cm^2$-scale) membranes of molybdenum disulfide ($MoS_2$) for electronics. However, the strong $MoS_2/Au$ interaction, beneficial for the exfoliation process, has a stron
Externí odkaz:
http://arxiv.org/abs/2108.09544
Autor:
Panasci, S. E., Schilirò, E., Greco, G., Cannas, M., Gelardi, F. M., Agnello, S., Roccaforte, F., Giannazzo, F.
Publikováno v:
ACS Appl. Mater. Interfaces 2021
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vd
Externí odkaz:
http://arxiv.org/abs/2104.13278
Autor:
Giannazzo, F., Dagher, R., Schilirò, E., Panasci, S. E., Greco, G., Nicotra, G., Roccaforte, F., Agnello, S., Brault, J., Cordier, Y., Michon, A.
Publikováno v:
Nanotechnology 32 (2020) 015705
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates
Externí odkaz:
http://arxiv.org/abs/2009.08673
Autor:
Fiorenza, P., Alessandrino, M., Carbone, B., Di Martino, C., Russo, A., Saggio, M., Venuto, C., Zanetti, E., Bongiorno, C., Giannazzo, F., Roccaforte, F.
Publikováno v:
Materials Science Forum 1004, (2020) 433-438
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence b
Externí odkaz:
http://arxiv.org/abs/2009.04846
Autor:
Fiorenza, P., Alessandrino, M., Carbone, B., Di Martino, C., Russo, A., Saggio, M., Venuto, C., Zanetti, E., Giannazzo, F., Roccaforte, F.
Publikováno v:
Nanotechnology 31, (2020) 125203
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation (TD) at the
Externí odkaz:
http://arxiv.org/abs/2009.04835
Autor:
Schilirò, E., Nigro, R. Lo, Panasci, S. E., Gelardi, F. M., Agnello, S., Yakimova, R., Roccaforte, F., Giannazzo, F.
Publikováno v:
Carbon 169 (2020) 172-181
In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H-SiC) has been investigated by atomic force microsc
Externí odkaz:
http://arxiv.org/abs/2007.14427
Autor:
Fiorenza, P., Schilirò, E., Giannazzo, F., Bongiorno, C., Zielinski, M., La Via, F., Roccaforte, F.
Publikováno v:
Applied Surface Science 526 (2020) 146656
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemiconductor (MOS) capacitors with nanoscale current and capacitance mapping u
Externí odkaz:
http://arxiv.org/abs/2005.01290