Zobrazeno 1 - 10
of 264
pro vyhledávání: '"Gianluca Piccinini"'
Publikováno v:
IEEE Access, Vol 11, Pp 98875-98913 (2023)
The new quantum era is expected to have an unprecedented social impact, enabling the research of tomorrow in several pivotal fields. These perspectives require a physical system able to encode, process and store for a sufficiently long amount of time
Externí odkaz:
https://doaj.org/article/2fa3553ee8734b83a68e1a7b06a8ba99
Autor:
Beatrice Allegri, Valeria Brenna, Linda Confalonieri, Alessandra Puzzini, Michele Nichelatti, Gianluca Piccinini, Umberto Mazza, Mauro Emilio Percudani
Publikováno v:
Brain, Behavior, & Immunity - Health, Vol 30, Iss , Pp 100633- (2023)
Background: the different lockdown phases due to COVID-19 may have negatively impacted pregnant women's mental health. Concerning antenatal stress, most studies focused more on the effect of pandemic onset than on the impact of the following phases a
Externí odkaz:
https://doaj.org/article/f2c8194205024b66bc93eb42f5eb0cca
Autor:
Fabrizio Mo, Chiara Elfi Spano, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini, Mariagrazia Graziano
Publikováno v:
Sensors, Vol 23, Iss 3, p 1687 (2023)
Food contamination by aflatoxins is an urgent global issue due to its high level of toxicity and the difficulties in limiting the diffusion. Unfortunately, current detection techniques, which mainly use biosensing, prevent the pervasive monitoring of
Externí odkaz:
https://doaj.org/article/ee30263f4c4b452ea0ffea23dad9d48d
Autor:
Chiara Elfi Spano, Fabrizio Mo, Roberta Antonina Claudino, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini, Marco Vacca
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 12, Iss 4, p 58 (2022)
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room tem
Externí odkaz:
https://doaj.org/article/5445c67bdb144da2b09475a4ddbc0998
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 12, Iss 1, p 13 (2022)
Molecular Field-Coupled Nanocomputing (FCN) is a computational paradigm promising high-frequency information elaboration at ambient temperature. This work proposes a model to evaluate the signal energy involved in propagating and elaborating the info
Externí odkaz:
https://doaj.org/article/22e54cdc0ef34051862b5b3f85e5c743
Autor:
Yuri Ardesi, Umberto Garlando, Fabrizio Riente, Giuliana Beretta, Gianluca Piccinini, Mariagrazia Graziano
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems. 19:1-24
Molecular Field-Coupling Nanocomputing (FCN) is one of the most promising technologies for overcoming Complementary Metal Oxide Semiconductor (CMOS) scaling issues. It encodes the information in the charge distribution of nanometric molecules and pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b827335b9b7653de1000d92e8f850fa
https://doi.org/10.1145/3552520
https://doi.org/10.1145/3552520
Publikováno v:
IEEE Transactions on Electron Devices. 69:5906-5912
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f765f0b3cc7f7ffc581dc9517673404c
https://doi.org/10.1109/ted.2022.3198025
https://doi.org/10.1109/ted.2022.3198025
Publikováno v:
IEEE Transactions on Nanotechnology. 21:52-59
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9da4ed996805afb886bcc030297b5f49
https://doi.org/10.1109/tnano.2022.3143720
https://doi.org/10.1109/tnano.2022.3143720
Publikováno v:
Active and Passive Electronic Components, Vol 2018 (2018)
We concentrate on Molecular-FET as a device and present a new modular framework based on VHDL-AMS. We have implemented different Molecular-FET models within the framework. The framework allows comparison between the models in terms of the capability
Externí odkaz:
https://doaj.org/article/ad6b6a6ce70f43bf8e540f56f9564eaf
Autor:
Fabrizio Mo, Chiara Elfi Spano, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini, Marco Vacca
Publikováno v:
Electronics; Volume 12; Issue 6; Pages: 1487
NanoSheet-Gate-All-Around-FETs (NS-GAAFETs) are commonly recognized as the future technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are expected to replace FinFETs in a few years, as they provide highly electrostatic gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::311ebc856145d65373259cd411c6ee81
https://doi.org/10.3390/electronics12061487
https://doi.org/10.3390/electronics12061487