Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Gianluca, Ciatto"'
Autor:
Arnaud Hemmerle, Nicolas Aubert, Thierry Moreno, Patrick Kékicheff, Benoît Heinrich, Sylvie Spagnoli, Michel Goldmann, Gianluca Ciatto, Philippe Fontaine
Publikováno v:
Journal of Synchrotron Radiation, Vol 31, Iss 1, Pp 162-176 (2024)
The SIRIUS beamline of Synchrotron SOLEIL is dedicated to X-ray scattering and spectroscopy of surfaces and interfaces, covering the tender to mid-hard X-ray range (1.1–13 keV). The beamline has hosted a wide range of experiments in the field of so
Externí odkaz:
https://doaj.org/article/311cc04ebde54d579ff5701a0979eb0f
Autor:
Andrea Navarro-Quezada, Katarzyna Gas, Anna Spindlberger, Fahim Karimi, Maciej Sawicki, Gianluca Ciatto, Alberta Bonanni
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract In the Fe-doped GaN phase-separated magnetic semiconductor Ga $$\delta $$ δ FeN, the presence of embedded $$\gamma '$$ γ ′ - $$\hbox {Ga}_y \hbox {Fe}_{4-y}$$ Ga y Fe 4 - y N nanocrystals determines the magnetic properties of the system.
Externí odkaz:
https://doaj.org/article/9c3bdd97e2614d10a6452bfa8099a85d
Autor:
Felisa Berenguer, Giorgio Pettinari, Marco Felici, Nilanthy Balakrishnan, Jesse N. Clark, Sylvain Ravy, Amalia Patané, Antonio Polimeni, Gianluca Ciatto
Publikováno v:
Communications Materials, Vol 1, Iss 1, Pp 1-8 (2020)
Coherent x-ray diffractive imaging is a powerful technique for determining strain on the nanometer scale. Here, it is used to image semiconducting GaAs1-yNy structures on a GaAs substrate and to measure strain, demonstrating its potential for studyin
Externí odkaz:
https://doaj.org/article/c552cf1d1c2e495d85ef0e75514ebf38
Autor:
Petros Abi Younes, Evgeniy Skopin, Medet Zhukush, Laetitia Rapenne, Hervé Roussel, Nicolas Aubert, Lhoussain Khrouz, Christophe Licitra, Clément Camp, Marie-Ingrid Richard, Nathanaelle Schneider, Gianluca Ciatto, Nicolas Gauthier, Denis Rouchon, Elsje Alessandra Quadrelli, Hubert Renevier
Publikováno v:
Chemistry of Materials. 34:10885-10901
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, 2022, 22 (8), pp.4768-4776. ⟨10.1021/acs.cgd.2c00137⟩
Crystal Growth & Design, 2022, 22 (8), pp.4768-4776. ⟨10.1021/acs.cgd.2c00137⟩
International audience; We perform quantitative analysis of the X-ray absorption data taken in situ during the earliest cycles of the ZnO atomic layer deposition on atomically flat InGaAs (001) surfaces. As deposition progresses, we observe a transit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24f4635449c4a98a6944fd6704a807d0
https://hal.univ-grenoble-alpes.fr/hal-03776959
https://hal.univ-grenoble-alpes.fr/hal-03776959
Autor:
Yael Etinger-Geller, Iryna Polishchuk, Gianluca Ciatto, Eva Seknazi, Achiya Livne, Boaz Pokroy
Publikováno v:
Physical Chemistry Chemical Physics. 21:14887-14891
The physical properties of nanocrystalline materials are known to be size dependent, owing to surface effects. Theoretically, a similar effect should also exist in amorphous materials. To examine this possibility, we carried out a study in which amor
Autor:
Alberto Levarato, Gianluca Ciatto, Sara Carturan, Cristina Tubaro, Gian Andrea Rizzi, Federica Bondino, D. De Salvador, Igor Píš, Enrico Napolitani, Francesco Sgarbossa
Publikováno v:
Applied surface science 541 (2021). doi:10.1016/j.apsusc.2020.148532
info:cnr-pdr/source/autori:Sgarbossa F.; Levarato A.; Carturan S.M.; Rizzi G.A.; Tubaro C.; Ciatto G.; Bondino F.; Pis I.; Napolitani E.; De Salvador D./titolo:Phosphorus precursors reactivity versus hydrogenated Ge surface: towards a reliable self-limited monolayer doping/doi:10.1016%2Fj.apsusc.2020.148532/rivista:Applied surface science/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume:541
info:cnr-pdr/source/autori:Sgarbossa F.; Levarato A.; Carturan S.M.; Rizzi G.A.; Tubaro C.; Ciatto G.; Bondino F.; Pis I.; Napolitani E.; De Salvador D./titolo:Phosphorus precursors reactivity versus hydrogenated Ge surface: towards a reliable self-limited monolayer doping/doi:10.1016%2Fj.apsusc.2020.148532/rivista:Applied surface science/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume:541
Three different phosphorus compounds are tested as precursors for monolayer formation on Ge (1 0 0) surface to be used as the nanoscale-controlled dopant source. By applying different deposition methodologies, the role of several deposition parameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02b470357582a40ddc32f78d192a6f4c
Autor:
Antonio Polimeni, Marco Felici, Jesse N. Clark, Felisa Berenguer, Amalia Patanè, Nilanthy Balakrishnan, Gianluca Ciatto, Sylvain Ravy, Giorgio Pettinari
Publikováno v:
Communications Materials
Communications Materials, 2020, 1 (1), ⟨10.1038/s43246-020-0021-6⟩
Communications Materials, Vol 1, Iss 1, Pp 1-8 (2020)
Communications Materials, 2020, 1 (1), ⟨10.1038/s43246-020-0021-6⟩
Communications Materials, Vol 1, Iss 1, Pp 1-8 (2020)
Coherent x-ray diffractive imaging is a nondestructive technique that extracts three-dimensional electron density and strain maps from materials with nanometer resolution. It has been utilized for materials in a range of applications, and has signifi
Autor:
Philippe Fontaine, A. Fouchet, J.-M. Dubuisson, J.-M. Kiat, Niels Keller, Christer Engblom, Y. M. Abiven, Gianluca Ciatto, Bruno Berini, Yves Dumont, M. Lecroard, N. Aubert, P.-E. Janolin
Publikováno v:
Journal of Synchrotron Radiation
Journal of Synchrotron Radiation, International Union of Crystallography, 2019, 26 (4), pp.1374-1387. ⟨10.1107/S1600577519003722⟩
Journal of Synchrotron Radiation, International Union of Crystallography, 2019, 26 (4), pp.1374-1387. ⟨10.1107/S1600577519003722⟩
A new high-vacuum multipurpose diffractometer (called FORTE from the French acronyms of the project) has recently been installed at the tender/hard X-ray SIRIUS beamline of Synchrotron SOLEIL, France. The geometry chosen allows one to work either in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c1bccf0fe10a026b334fd52392d5a40
https://hal-normandie-univ.archives-ouvertes.fr/hal-02264671/document
https://hal-normandie-univ.archives-ouvertes.fr/hal-02264671/document
Autor:
Evgeniy V, Skopin, Laetitia, Rapenne, Hervé, Roussel, Jean-Luc, Deschanvres, Elisabeth, Blanquet, Gianluca, Ciatto, Dillon D, Fong, Marie-Ingrid, Richard, Hubert, Renevier
Publikováno v:
Nanoscale. 10(24)
InGaAs is one of the III-V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal-semiconductor junction. A key co