Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Gianfranco Vitali"'
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8c775b6babad03f3f0ff66626eb7859
https://doi.org/10.1201/9781003069614-32
https://doi.org/10.1201/9781003069614-32
Autor:
Daniela Gogova, Giuseppe Zollo, Christo Angelov, Gianfranco Vitali, Kostadinka Gesheva, Emil Vlakhov, Yordan G. Marinov, Nikolai Pashov, Tatyana Ivanova, M. Kalitzova
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 229:65-72
The effect of high-frequency electromagnetic field (HFEMF) on the electrical properties of metal ion beam implanted silicon was studied. Silicon wafers, (1 0 0) oriented, were implanted with Zn + , Te + or Bi + with energy of 50 keV and fluences from
Publikováno v:
Journal of Materials Science: Materials in Electronics. 14:783-786
Nanosized precipitation in high-dose Zn+- and Bi+-implanted Si is investigated by high-resolution transmission electron microscopy of cross-sectional specimens. In spite of the different diffusivities of Zn and Bi in Si, their low solubility results
Autor:
Marian Tzolov, D. Dimova-Malinovska, Ivan Gueorguiev Ivanov, N Tzenov, Gianfranco Vitali, M. Kalitzova, Giuseppe Zollo, C. Pizzuto
Publikováno v:
Scopus-Elsevier
ZnO:Al films were deposited by RF magnetron sputtering in triode configuration applying an external DC electric field to the substrates. Reflection high-energy electron diffraction measurements characterized the different films as consisting of rando
Autor:
M. Kalitzova, Ivan Gueorguiev Ivanov, Gianfranco Vitali, Giuseppe Zollo, C. Pizzuto, D. Dimova-Malinovska, N Tzenov, Marian Tzolov
Publikováno v:
Thin Solid Films. 379:28-36
Highly conductive and transparent in the visible range Al-doped ZnO (ZnO:Al) and undoped ZnO films have been deposited by RF magnetron sputtering. Reflection high-energy electron diffraction observations characterized them as textured. The habitus of
Publikováno v:
Vacuum. 58:516-522
The effects of N 2 annealing atmosphere on implanted and low-power pulsed-laser annealed (LPPLA) InP matrix are discussed. The analyses were performed, by using several complementary techniques such as RBS, Raman spectroscopy, SIMS and electrical mea
Publikováno v:
Scopus-Elsevier
Low-power pulsed-laser annealing was applied to Zn+-implanted InP samples. In order to avoid surface oxidation during the treatment, the laser irradiation was carried out in inert ambient of nitrogen at different pressures. The analytical techniques
Autor:
Anelia Kakanakova-Georgieva, Ts. Marinova, M. Kalitzova, C. Pizzuto, Gianfranco Vitali, Giuseppe Zollo
Publikováno v:
Scopus-Elsevier
Data on the effects of 140 keV Zn+-implantation in (100) GaAs and the consequent low power pulsed laser annealing (LPPLA) on the As/Ga ratio and the chemical states of the elements at the surface and in the subsurface region are presented. The result
Publikováno v:
Scopus-Elsevier
Reflection high‐energy electron diffraction (RHEED) technique, with the possibility to shift, rotate, and tilt the sample with respect to the electron beam, has been used to investigate the structure of the transition layers formed at the interface
Publikováno v:
Scopus-Elsevier
Structurally different carbon films selectively generated at the surface of glassy carbon, titanium, and silica glass substrates are tested as nucleating layers for diamond synthesis by hot filament chemical vapour deposition (HFCVD). Before the CVD