Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Gian Francesco Lorusso"'
Autor:
Gian Francesco Lorusso, Dieter Van Den Heuvel, Mohamed Zidan, Alain Moussa, Christophe Beral, Anne-Laure Charley, Danilo De Simone, Anuja De Silva, Elisseos Verveniotis, Ali Haider, Tsuyoshi Kondo, hiroyuki shindo, yasushi ebizuka, miki isawa
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::213d302b05d4ba0f89b45b5dc70ef7f0
https://doi.org/10.1117/12.2658280
https://doi.org/10.1117/12.2658280
Autor:
Alain Moussa, Janusz Bogdanowicz, Benjamin Groven, Pierre Morin, Matteo Beggiato, Mohamed Saib, Gaetano Santoro, Yaniv Abramovitz, Kevin Houtchens, Shmuel Ben Nissim, Noga Meir, Joey Hung, Adam M. Urbanowicz, Roy Koret, Igor Turovets, Gian Francesco Lorusso, Anne-Laure Charley
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2d4816ee1ae6392a25060d9b03288ac
https://doi.org/10.1117/12.2657968
https://doi.org/10.1117/12.2657968
Advanced high-voltage e-beam system combined with an enhanced D2DB for on-device overlay measurement
Autor:
Seul-Ki Kang, Kotaro Maruyama, Yuichiro Yamazaki, Matteo Beggiato, Anabela Veloso, Gian Francesco Lorusso
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a5815540bf538fd390ce3f914c346bc
https://doi.org/10.1117/12.2661180
https://doi.org/10.1117/12.2661180
Autor:
Gian Francesco Lorusso, Chris A. Mack
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad65a572b6f260dbf52a902f2b3db639
https://doi.org/10.1117/1.jmm.22.2.021001
https://doi.org/10.1117/1.jmm.22.2.021001
Autor:
Gian Francesco Lorusso
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cca436b38a03380f11184cb734691cc
https://doi.org/10.1117/1.jmm.22.2.021005
https://doi.org/10.1117/1.jmm.22.2.021005
Autor:
Mohamed Zidan, Daniel Fischer, Joren Severi, Danilo De Simone, Alain Moussa, Angelika Müllender, Chris Mack, Anne-Laure Charley, Philippe Leray, Stefan De Gendt, Gian Francesco Lorusso
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd8f68f0e43edf44ff28c3e38951008a
https://doi.org/10.1117/1.jmm.22.2.021002
https://doi.org/10.1117/1.jmm.22.2.021002
Autor:
Mahmudul Hasan, Christophe Beral, Gian Francesco Lorusso, Danilo De Simone, Alain Moussaa, Dieter Van Den Heuvela, Anne-Laure Charley, Philippe Leraya
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f285b8ac69dbae9d38edd66f1608a324
https://doi.org/10.1117/12.2641768
https://doi.org/10.1117/12.2641768
Autor:
Gian Francesco Lorusso, Danilo De Simone, Mohamed Zidan, Joren Severi, Alain Moussa, Bappaditya Dey, Sandip Halder, Alex Goldenshtein, Kevin Houchens, Gaetano Santoro, Daniel Fischer, Angelika Muellender, Chris Mack, Tsuyoshi Kondo, Tomoyasu Shohjoh, Masami Ikota, Anne-Laure Charley, Stefan De Gendt, Philippe Leray
Publikováno v:
Japanese Journal of Applied Physics. 62:SG0808
One of the many constraints of high numerical aperture extreme ultraviolet lithography is related to resist thickness. A critical consequence of moving from the current 0.33 to 0.55 NA (high NA) is depth of focus reduction. The question we seek to an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ccdf54108f8c454e658d681a4ef2a0c
https://doi.org/10.35848/1347-4065/acc3a4
https://doi.org/10.35848/1347-4065/acc3a4
Publikováno v:
Microelectronic Engineering. 190:33-37
Most scanning electron microscope (SEM) measurements of pattern roughness today produce biased results, combining the true feature roughness with noise from the SEM. Further, the bias caused by SEM noise changes with measurement conditions and with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1634fbf560d52e641c94ef25900f0d70
https://doi.org/10.1016/j.mee.2018.01.010
https://doi.org/10.1016/j.mee.2018.01.010
Autor:
Chris A. Mack, Gian Francesco Lorusso
Publikováno v:
Journal of Vacuum Science & Technology B. 37:062903
Measuring line-edge roughness in a top-down scanning electron microscope (SEM) is complicated by noise in the SEM image, which biases the measured roughness. When either the roughness is small or the noise is large, it can become very difficult to se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01cf87ac66e5b2603c9f11a5bac9e3e6
https://doi.org/10.1116/1.5122758
https://doi.org/10.1116/1.5122758