Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Gi-ho Cha"'
Publikováno v:
The Transactions of the Korean Institute of Electrical Engineers P. 64:97-103
To achieve the safety and reliability, RAMS activity for a railway signal system of Near Surface Transit is studied. In this paper, preliminary hazard analysis in RAMS activities is studied for the railway signal system of Near Surface Transit. Preli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4ea2559e78ea539db6f8d1d09eb59a2
https://doi.org/10.5370/kieep.2015.64.3.097
https://doi.org/10.5370/kieep.2015.64.3.097
Publikováno v:
Journal of the Korean society for railway. 15:42-47
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4dea24b60fc6fa90b26b8b77901abd
https://doi.org/10.7782/jksr.2012.15.1.042
https://doi.org/10.7782/jksr.2012.15.1.042
Publikováno v:
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).
A Hall effect sensor using a 7 /spl mu/m, 1.7 /spl Omega/-cm bipolar process was successfully developed. The Hall sensor consists of various patterns, such as regular shapes, rectangles, diamond, hexagon and cross shapes, to optimize offset voltage a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::551cf8e4e05c2e8c73ce1514de4bbd94
https://doi.org/10.1109/miel.2002.1003192
https://doi.org/10.1109/miel.2002.1003192
Autor:
Byoung Hun Lee, Gi-ho Cha, Kye-hee Yeom, Joon-hee Lee, Woo-Tag Kang, Yun-Gi Kim, Kyu-Charn Park, Sang-Cheol Lee, Chang-Gyu Hwang, Tae-Earn Shim, Duck-Hyung Lee, Sunil Yu, Sang-In Lee, Il-Kwon Kim
Publikováno v:
International Electron Devices Meeting. Technical Digest.
A fully planarized 16 Mb SOI DRAM has been successfully fabricated featuring pattern-bonded SOI (PBSOI), CMP processes, STI (Shallow Trench Isolation) and the silicon-on-capacitor (SOC) structure with 0.3 um technology using i-line lithography. The f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e635a0c760ad0531237f2ba5d7439d6
https://doi.org/10.1109/iedm.1996.554056
https://doi.org/10.1109/iedm.1996.554056
Publikováno v:
SPIE Proceedings.
Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57ed0a6effaa2fc3630971e3b121c433
https://doi.org/10.1117/12.444659
https://doi.org/10.1117/12.444659
Autor:
Jingmin Leng, John J. Sidorowich, Byeong-Hoon Lee, Joo-Tae Moon, Gi-ho Cha, Y. D. Yoon, Sang-In Lee, Jon Opsal
Publikováno v:
SPIE Proceedings.
We developed a robust measurement recipe for six layer SOI film stack. Both spectrometer and BPR were combined to characterize the plate and storage polysilicons. A new global optimization method was developed to find the best solution in parameter s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f61029c515197c6ead892e809c53d7d8
https://doi.org/10.1117/12.250935
https://doi.org/10.1117/12.250935
Improvement of Photo-Misalignment in Patterned Wafer Bonding Process for Silicon-on-Insulator Device
Autor:
Gi–Ho Cha, Il-Kwon Kim, Moonyong Lee, Ki–Hong Lee, Geum–Jong Bae, Sang-In Lee, Kyung Wook Lee
Publikováno v:
Japanese Journal of Applied Physics. 38:3487
We have found that the photo-misalignment problem in patterned and bonded silicon-on-insulator (PBSOI) was closely related to the bonding process. We examined the stress effect on photo-misalignment using a vacuum bonding system. Photo-misalignment w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a87ee51fec57bc357cd585fbaf2b147f
https://doi.org/10.1143/jjap.38.3487
https://doi.org/10.1143/jjap.38.3487
Publikováno v:
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595); 2002, p273-273, 1p