Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Gi-Tae Lim"'
Autor:
Young-Bae Park, Gi-Tae Lim
Publikováno v:
Current Applied Physics. 11:S115-S118
An observation of electromigration behavior in a eutectic SnPb solder with various line lengths was performed using an in-situ scanning electron microscope chamber with a 100 °C, 3 × 10 4 A/cm 2 condition. Edge-drift occurred at the cathode, and hi
Autor:
Jaedong Kim, Young-Bae Park, Byoung-Joon Kim, Young-Chang Joo, Gi-Tae Lim, Kiwook Lee, Myeong-Hyeok Jeong
Publikováno v:
Journal of Electronic Materials. 39:2368-2374
Thermal annealing and electromigration (EM) tests were performed with Cu pillar/Sn bumps to understand the growth mechanism of intermetallic compounds (IMCs). Annealing tests were carried out at both 100°C and 150°C. At 150°C, EM tests were perfor
Autor:
Gi-Tae Lim, Byoung-Joon Kim, Young-Chang Joo, Jaedong Kim, Ho-Young Lee, Young-Bae Park, Kiwook Lee
Publikováno v:
Journal of Electronic Materials. 39:2281-2285
Fine-pitch Cu pillar bumps have been adopted for flip-chip bonding technology. Intermetallic compound (IMC) growth in Cu pillar bumps was investigated as a function of annealing or current stressing by in situ observation. The effect of IMC growth on
Autor:
Kiwook Lee, Jaedong Kim, Ho-Young Lee, Byoung-Joon Kim, Young-Chang Joo, Young-Bae Park, Gi-Tae Lim
Publikováno v:
Metals and Materials International. 15:815-818
The reaction between Cu pillar and eutectic SnPb solder during isothermal annealing was studied systematically. Intermetallic compounds (IMCs), such as Cu6Sn5 and Cu3Sn, were formed in between Cu and SnThe parabolic rate law was observed on IMC forma
Publikováno v:
Metals and Materials International. 15:819-823
Intermetallic compounds (IMCs) and Kirkendall void growth kinetics at various interfaces in Au stud bumps were studied in terms of isothermal aging at 120 °C, 150 °C, and 180 °C for 300 h. Phases of AuSn, AuSn2, and AuSn4 form at the interface of
Publikováno v:
Journal of Electronic Materials. 38:2228-2233
The in situ intermetallic compound (IMC) growth in Cu pillar/Sn bumps was investigated by isothermal annealing at 120°C, 150°C, and 180°C using an in situ scanning electron microscope. Only the Cu6Sn5 phase formed at the interface between the Cu p
Autor:
Qwan-Ho Chung, Kwang-Yoo Byun, Young-Bae Park, Seung-Taek Yang, Gi-Tae Lim, Jang-Hee Lee, Min Suk Suh
Publikováno v:
Journal of the Korean Physical Society. 54:1784-1792
The e ects of severe current crowding and Joule heating on the damage morphology and the electromigration parameters were evaluated for ip chip Sn-3.5Ag solder bumps with Cu underbump metallurgy. in-situ electromigration testing in a scanning electro
Publikováno v:
2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Cu pillar bumps with eutectic SnPb solder were annealed and their microstructures were investigated. Linear relationship was observed between thickness of intermetallic compounds (IMCs: Cu6Sn5, Cu3Sn) and square root of time at 120 and 150degC. Kirke
Publikováno v:
2008 58th Electronic Components and Technology Conference.
Cu pillar bump with eutectic SnPb was annealed and the micro structures were observed by scanning electron microscopy. Both of Cu6Sn5 and Cu3Sn grew following parabolic rate law at 120 and 150degC. At 165degC, Cu6Sn5 growth was stagnated while Cu3Sn
Autor:
Seung-Taek Yang, Young-Bae Park, Jang-Hee Lee, Qwan-Ho Chung, Gi-Tae Lim, Kwang-Yoo Byun, Min Suk Suh
Publikováno v:
2008 58th Electronic Components and Technology Conference.
To understand for size effect on electromigration behavior in flip chip Pb-free solder bump, electromigration tests were performed with change of pad open size and solder bump height at 140degC, 4.6times104 A/cm2. Electromigration lifetime increases