Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Gi Ppeum Jeong"'
Autor:
Gi-Ppeum Jeong, Jun-Seong Park, Seung-Jae Lee, Pil-su Kim, Man-Hyup Han, Seong-Wan Hong, Eun-Seong Kim, Jin-Hyung Park, Byoung-Kwon Choo, Seung-Bae Kang, Jea-Gun Park
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract In this study, the chemical decomposition of a polyimide-film (i.e., a PI-film)-surface into a soft-film-surface containing negatively charged pyromellitic dianhydride (PMDA) and neutral 4,4′-oxydianiline (ODA) was successfully performed.
Externí odkaz:
https://doaj.org/article/b2d88fea839a4b08bae5c4aedf494f14
Autor:
Young-Hye Son, Gi-Ppeum Jeong, Pil-Su Kim, Man-Hyup Han, Seong-Wan Hong, Jae-Young Bae, Sung-In Kim, Jin-Hyung Park, Jea-Gun Park
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process
Externí odkaz:
https://doaj.org/article/3fb08806d82440e48508ac56b10314b3
Autor:
Seong-In Kim, Gi-Ppeum Jeong, Seung-Jae Lee, Jong-Chan Lee, Jun-Myeong Lee, Jin-Hyung Park, Jae-Young Bae, Jea-Gun Park
Publikováno v:
Nanomaterials, Vol 11, Iss 12, p 3296 (2021)
For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abra
Externí odkaz:
https://doaj.org/article/816cd2fc76ef4fd19c9665ba88004087
Autor:
Gi-Ppeum Jeong, Young-Hye Son, Jun-Seong Park, Pil-Su Kim, Man-Hyup Han, Seong-Wan Hong, Jin-Hyung Park, Hao Cui, Bo-Un Yoon, Jea-Gun Park
Publikováno v:
Applied Sciences, Vol 11, Iss 22, p 10872 (2021)
A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge1Sb4Te5 film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-chan
Externí odkaz:
https://doaj.org/article/bc367522185d4bbf840c158ae4751bfb
Autor:
Seong Wan Hong, Jea-Gun Park, Man Hyup Han, Jin Hyung Park, Young Hye Son, Jae Young Bae, Sung In Kim, Pil Su Kim, Gi Ppeum Jeong
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Scientific Reports
Scientific Reports
Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process at tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d72f3e8333aa04be8d1fa4fc59e51ca
https://doaj.org/article/3fb08806d82440e48508ac56b10314b3
https://doaj.org/article/3fb08806d82440e48508ac56b10314b3
Autor:
Man-Hyup Han, Pil-Su Kim, Jin-Hyung Park, Bo-Un Yoon, Gi-Ppeum Jeong, Seong-Wan Hong, Hao Cui, Jun-Seong Park, Young-Hye Son, Jea-Gun Park
Publikováno v:
Applied Sciences; Volume 11; Issue 22; Pages: 10872
Applied Sciences, Vol 11, Iss 10872, p 10872 (2021)
Applied Sciences, Vol 11, Iss 10872, p 10872 (2021)
A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge1Sb4Te5 film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4052e8b3d3e7645044759ea97c3982d
Autor:
Gi-Ppeum Jeong, Jun-Seong Park, Seung-Jae Lee, Pil-su Kim, Man-Hyup Han, Seong-Wan Hong, Eun-Seong Kim, Jin-Hyung Park, Byoung-Kwon Choo, Seung-Bae Kang, Jea-Gun Park
Publikováno v:
Scientific reports. 12(1)
In this study, the chemical decomposition of a polyimide-film (i.e., a PI-film)-surface into a soft-film-surface containing negatively charged pyromellitic dianhydride (PMDA) and neutral 4,4′-oxydianiline (ODA) was successfully performed. The chemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8034fe6c87fd6aa86697164164ffb180
https://pubmed.ncbi.nlm.nih.gov/35233019
https://pubmed.ncbi.nlm.nih.gov/35233019
Autor:
Young-Hye Son, Sung-Goon Kang, Sangsu Yun, Hao Cui, Jin-Hyung Park, Gi-Ppeum Jeong, Eun-bin Seo, Jea-Gun Park, Soo-Bum Kim, Jong-Young Cho, Jae-Young Bae
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P667-P672
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c878b4e3ac5313526af9cef5470fbe1b
https://doi.org/10.1149/2.0061911jss
https://doi.org/10.1149/2.0061911jss
Autor:
Sung In Kim, Jea-Gun Park, Jong han Jeong, Gi Ppeum Jeong, Je hwan Lee, Sang Su Yun, Jin Hyung Park, Jae Young Bae, Young Hye Son
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. 616:126143
The importance of obtaining a dishing-free Cu-film chemical-mechanical planarization (CMP) has rapidly increased as the line width of Cu-wire integration in advanced semiconductor devices reduced to less than 10 nm. Unlike conventional etching (i.e.,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36d986d85984c24e6c779484e54347a3
https://doi.org/10.1016/j.colsurfa.2021.126143
https://doi.org/10.1016/j.colsurfa.2021.126143
Autor:
Jae Young Bae, Gi Ppeum Jeong, Young Hye Son, Eun Bin Seo, Jea-Gun Park, Soo Bum Kim, Sang Su Yoon, Jin Hyung Park, Hao Cui, Jong Young Cho
Publikováno v:
Semiconductor Science and Technology. 34:065002
In the fabrication of cross-point phase-change-memory-cells through atomic-layer-deposition of Ge-doped SbTe (Ge-ST) film followed by chemical-mechanical-polarization (CMP), a remarkable surface tensile stress was generated, originating from the surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d0d0ebe2a0c1ff97398c789ab1cff20
https://doi.org/10.1088/1361-6641/ab13ca
https://doi.org/10.1088/1361-6641/ab13ca