Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Gholamreza Pirgholi-Givi"'
Autor:
Zakieh Hosseini, Yashar Azizian-Klandaragh, Samad Sobhanian, Mohammad Kouhi, Gholamreza Pirgholi-Givi
Publikováno v:
مواد نوین, Vol 12, Iss 43, Pp 23-35 (2021)
Introduction:In this research, cadmium sulfide (CdS) and cadmium sulfide doped with 3 cc manganese (3cc Mn-CdS) nanostructures have been prepared by ultrasound-assisted method and obtained products have been used for preparation of PVC: CdS and PVP:
Externí odkaz:
https://doaj.org/article/571d640379474732a21a2207d1a72088
Autor:
Ali Barkhordari, Şemsettin Altındal, Gholamreza Pirgholi-Givi, Hamidreza Mashayekhi, Süleyman Özçelik, Yashar Azizian-Kalandaragh
Publikováno v:
Silicon. 15:855-865
Autor:
Murat Ulusoy, Yosef Badali, Gholamreza Pirgholi-Givi, Yashar Azizian-Kalandaragh, Şemsettin Altındal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5fa1fd28f2f8914453094f94e22056b
https://avesis.gazi.edu.tr/publication/details/44c6136d-e4b3-4101-8106-f131ba2670bf/oai
https://avesis.gazi.edu.tr/publication/details/44c6136d-e4b3-4101-8106-f131ba2670bf/oai
Autor:
Yashar Azizian-Kalandaragh, Ali Barkhordari, Süleyman Özçelik, Gholamreza Pirgholi-Givi, Şemsettin Altındal, Hamid Reza Mashayekhi
Publikováno v:
Silicon. 14:5437-5443
In this paper, the polyvinyl pyrrolidine (PVP) polymer layer doped by barium titanate (BaTiO3) nanostructures has been prepared as an interfacial layer to fabricate a metal-semiconductor-metal (MPS) diode. The inserted layer in the metal-semiconducto
Autor:
Şemsettin Altındal, Seyed Ali Delbari, Mehdi Shahedi Asl, Gholamreza Pirgholi-Givi, Abbas Sabahi Namini, Yashar Azizian-Kalandaragh, Javid Farazin
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:21909-21922
In this paper, (Co-TeO2) nanostructures were synthesized using the microwave-assisted method for the fabrication of (PVP:Co-TeO2) as an organic interlayer (OI) at Al/p-Si interface. Structural and optical properties of nanostructures were investigate
Publikováno v:
Physica Scripta. 98:055803
In this research, Au-PVC-Si (MPS1), Au-(CeO2: PVC)-Si (MPS2) Schottky barrier diodes (SBDs) have been grown on n-type silicon (n-Si) with the aim of investigating the frequency dependence and the effect of polymer interlayer on dielectric parameters
Publikováno v:
Journal of Applied Polymer Science. 139
Autor:
Yashar Azizian-Kalandaragh, Yosef Badali, Mir-Ahmad Jamshidi-Ghozlu, Ferhat Hanife, Süleyman Özçelik, Şemsettin Altındal, Gholamreza Pirgholi-Givi
Publikováno v:
Physica B: Condensed Matter. 650:414495
© 2022In this work, the temperature-dependent (80–360 K) dielectric properties of the Au/ZnO-PVA/n-Si structure was investigated employing capacitance-voltage (C–V) and conductance-voltage (G/ω-V) experiments at 1 MHz. The results indicate that
Autor:
Şemsettin Altındal, Ali Barkhordari, Gholamreza Pirgholi-Givi, Murat Ulusoy, Hamidreza Mashayekhi, Süleyman Özçelik, Yashar Azizian-Kalandaragh
The effect of 60Co-iradiation) on the electrical parameters in the Au/(ZnOMn:PVP)/n-Si SDs have been investigated using the current-voltage (I–V) and capacitance/conductance-voltage (C/G–V) measurements. Firstly, the values of reverse-saturation-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::252a948beb73b8413e39bf09b0377c61
https://avesis.gazi.edu.tr/publication/details/bf5c57d5-9d81-447e-b14b-df2aa9ba4452/oai
https://avesis.gazi.edu.tr/publication/details/bf5c57d5-9d81-447e-b14b-df2aa9ba4452/oai
Autor:
Yosef Badali, Javid Farazin, Şemsettin Altındal, Yashar Azizian-Kalandaragh, Gholamreza Pirgholi-Givi
Publikováno v:
Applied Physics A. 127
To determine the influence of the thin polymer interface film on the electrical and dielectric characteristics of the Al/p-Si MS structure, the Graphene doped (Bi2Te3-Bi2O3-TeO2): PVP film was deposited on the silicon substrate using the spin-coating