Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories

Autor: Ghofrani, Amirali

Publikováno v: Ghofrani, Amirali. (2016). Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories. 0035: Electrical & Computer Engineering. Retrieved from: http://www.escholarship.org/uc/item/4v22d8gz

A series of breakthroughs in memristive devices have demonstrated the potential of memristor arrays to serve as next generation resistive random access memories (ReRAM), which are fast, low-power, ultra-dense, and non-volatile. However, memristors' u

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::15b939567136dc4e324ce8aa99fb963a
http://www.escholarship.org/uc/item/4v22d8gz

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