Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Ghobadi, Nayereh"'
Publikováno v:
In Materials Science in Semiconductor Processing February 2025 186
The electronic properties of a field-effect transistor with two different structures of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that these compound
Externí odkaz:
http://arxiv.org/abs/2112.04171
Publikováno v:
In International Journal of Hydrogen Energy 27 June 2024 72:506-520
Publikováno v:
In Solar Energy Materials and Solar Cells 1 June 2024 269
In this work, the electrical and spin properties of monolayer MoSi2X4 (X= N, P, As, and Sb) under vertical strain are investigated. The band structures state that MoSi2N4 is an indirect semiconductor, whereas other compounds are direct semiconductors
Externí odkaz:
http://arxiv.org/abs/2106.07081
In this work, the structural, electrical, and optical properties of bilayer SiX (X= N, P, As, and Sb) are studied using density functional theory (DFT). Five different stacking orders are considered for every compound and their structural properties
Externí odkaz:
http://arxiv.org/abs/2102.03563
In this paper, the electrical and spin properties of mono- and bilayer HfSSe in the presence of a vertical electric field are studied. The density functional theory is used to investigate their properties. Fifteen different stacking orders of bilayer
Externí odkaz:
http://arxiv.org/abs/2008.11361
In this work, the electrical properties of bilayer Antimonene with different stacking orders are studied. Density functional theory with van der Waals (vdW) correction is used to investigate the electrical performances. Two configurations demonstrate
Externí odkaz:
http://arxiv.org/abs/2007.10258
Publikováno v:
In Applied Surface Science 1 December 2023 639
Publikováno v:
In Journal of Physics and Chemistry of Solids October 2023 181