Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ghewa Akiki"'
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2020, 531, pp.147305. ⟨10.1016/j.apsusc.2020.147305⟩
Applied Surface Science, Elsevier, 2020, 531, pp.147305. ⟨10.1016/j.apsusc.2020.147305⟩
International audience; An Area Selective Deposition (ASD) process using Plasma-Enhanced Chemical Vapour Deposition (PECVD) is demonstrated. Using a plasma chemistry containing a fluorinated silicon precursor (SiF 4), no deposition is observed on an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::887a1c850ba3718b0a640346eea2e4ea
https://hal.archives-ouvertes.fr/hal-03001811
https://hal.archives-ouvertes.fr/hal-03001811
Autor:
Mathieu Frégnaux, Muriel Bouttemy, Ghewa Akiki, Sergej Filonovich, Erik Johnson, D. Daineka, Pavel Bulkin, Ileana Florea
Publikováno v:
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2021, 39 (1), pp.013201. ⟨10.1116/6.0000653⟩
Journal of Vacuum Science and Technology A, American Vacuum Society, 2021, 39 (1), pp.013201. ⟨10.1116/6.0000653⟩
International audience; Plasma Enhanced Chemical Vapor Deposition of silicon from SiF4/H2/Ar gas mixture is observed on a SiOxNy surface, while under the same plasma conditions, silicon films do not grow on AlOx nor Al surfaces. Transmission electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f70cd24dc0ea60ac237ffb0b2191de6b
https://doi.org/10.1116/6.0000653
https://doi.org/10.1116/6.0000653
