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pro vyhledávání: '"Ghazal Soheli"'
Autor:
Cheng-Hsiang Hsu, Yoonsoo Rho, Steve Volkman, Brian Tyrrell, Suman Datta, Corey Stull, Zhan Zhang, Woo-Bin Song, Suraj Cheema, Jim Ciston, Padraic Shafer, Apurva Mehta, Won-Tae Koo, Chenming Hu, Gianni Pinelli, Jong-Ho Bae, Li-Chen Wang, Seung-Geol Nam, Matthew A. Cook, Dong Jin Jung, Jorge Gomez, Dominick Pipitone, Patrick Fay, Sayeef Salahuddin, John W. Freeland, Chung-Hsun Lin, Jinseong Heo, Kab-Jin Nam, Wenshen Li, Mohamed Mohamed, Nirmaan Shanker, Costas P. Grigoropoulos, Matthew San Jose, Ramamoorthy Ramesh, Vladimir Stoica, Ghazal Soheli, Christopher J. Tassone, Dong Ik Suh, David Thompson, Yu-Hung Liao, Ravi Rastogi, Shang-Lin Hsu, Daewoong Kwon
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. This led to the adoption of high-κ diel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f8aaa2e1c2c48a54ff1b9ae31d4a4b
https://doi.org/10.21203/rs.3.rs-413053/v1
https://doi.org/10.21203/rs.3.rs-413053/v1
