Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Ghazal A. Fahmy"'
Publikováno v:
Ain Shams Engineering Journal, Vol 13, Iss 3, Pp 101581- (2022)
This paper presents a new differential power oscillator design based on a differential class-E power amplifier. The designs use high power enhancement-GaN HEMT (e-GaN) for its fast switching time, low ON resistance and wide energy band gap properties
Externí odkaz:
https://doaj.org/article/69c43af440c64147ac5bf1d983bd47f1
Autor:
Manal M. Mohamed, Ghazal A. Fahmy, Adel B. Abdel-Rahman, Ahmed Allam, Adel Barakat, Mohammed Abo-Zahhad, Hongting Jia, Ramesh K. Pokharel
Publikováno v:
IEEE Access, Vol 6, Pp 46826-46832 (2018)
This paper presents a high-efficiency CMOS rectifier based on an improved dynamic threshold reduction technique (DTR). The proposed DTR consists of a clamper circuit that biases the gates of pMOS diode switches through a capacitor and diode-connected
Externí odkaz:
https://doaj.org/article/2a812cc16bca4d7eb74c24f1ce473fec
Publikováno v:
WSEAS TRANSACTIONS ON POWER SYSTEMS. 17:372-381
Current-reuse circuit with a low impedance current-reuse path has been proposed to enrich high flat gain, high efficiency, and high output power across the operating band. While an inductor-capacitor (LC) interstage is employed to improve the lineari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0fa866426a2bfe2a55139331fbc0c4
https://doi.org/10.37394/232016.2022.17.37
https://doi.org/10.37394/232016.2022.17.37
Publikováno v:
International Journal of Electronics Letters. :1-10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edfb1e1cfdf22c49f34c93b7752f87b3
https://doi.org/10.1080/21681724.2022.2117850
https://doi.org/10.1080/21681724.2022.2117850
Publikováno v:
2022 39th National Radio Science Conference (NRSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14165f52a020f450ec09e13aa364241c
https://doi.org/10.1109/nrsc57219.2022.9971179
https://doi.org/10.1109/nrsc57219.2022.9971179
Publikováno v:
Procedia Computer Science. 182:159-165
The next generation, 5G and 6G standards, are allocated different bands for the same standard due to the worsening shortage of available spectrum. This has led to significant research interest in digitizing the RF signal as close as possible to the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e53e2c4bd236938cc44dc0119bbb33
https://doi.org/10.1016/j.procs.2021.02.021
https://doi.org/10.1016/j.procs.2021.02.021
Publikováno v:
International Journal on Smart Sensing and Intelligent Systems. 15
Recently, most outdoor localizations use a hybrid mechanism that integrating some IoT devices occupying with GPS (Anchor Nodes) and other wireless sensor nodes like LoRaWAN (without GPS-Unknown node). This hybrid method employed to achieve low power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a88d9b9809ae0bfe0a954700662ed776
https://doi.org/10.2478/ijssis-2022-0012
https://doi.org/10.2478/ijssis-2022-0012
Autor:
Ghazal A. Fahmy, Mohamed Zorkany
Publikováno v:
Electronics
Volume 10
Issue 5
Electronics, Vol 10, Iss 622, p 622 (2021)
Volume 10
Issue 5
Electronics, Vol 10, Iss 622, p 622 (2021)
A memristor element has been highlighted in recent years and has been applied to several applications. In this work, a memristor-based digital to analog converter (DAC) was proposed due to the fact that a memristor has low area, low power, and a low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb13a30f8a2d7a437d2cd5fa6fc33991
Publikováno v:
2020 8th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC).
This paper presents a power oscillator design based on a class E power amplifier. The enhancement GaN HEMT is used for its fast switching time, low ON resistance and low temperature sensitivity. The presented circuit is designed to be used in far fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b22c0f5440920f8d161d648f63baadd4
https://doi.org/10.1109/jac-ecc51597.2020.9355883
https://doi.org/10.1109/jac-ecc51597.2020.9355883
Publikováno v:
Ain Shams Engineering Journal, Vol 13, Iss 3, Pp 101581-(2022)
This paper presents a new differential power oscillator design based on a differential class-E power amplifier. The designs use high power enhancement-GaN HEMT (e-GaN) for its fast switching time, low ON resistance and wide energy band gap properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fc2d4d0e724d41c302e018e5dc0dfe7
https://doi.org/10.1016/j.asej.2021.09.008
https://doi.org/10.1016/j.asej.2021.09.008