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pro vyhledávání: '"Ghanashyam Krishna Mamidipudi"'
Autor:
Pravallika Banoth, Chinna Kandula, Praveen Kumar Lavudya, Saidulu Akaram, Luis De Los Santos Valladares, RajaniKanth Ammanabrolu, Ghanashyam Krishna Mamidipudi, Pratap Kollu
The application of a novel BiFeO3 (BFO)-black TiO2 (BTO) composite (called BFOT) as a photocatalyst for the degradation of methylene blue is reported. The p-n heterojunction photocatalyst was synthesized for the first time through microwave-assisted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f037a2e65d50da560c584862a6516fe
https://www.repository.cam.ac.uk/handle/1810/350910
https://www.repository.cam.ac.uk/handle/1810/350910
Akademický článek
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Publikováno v:
Materials Chemistry and Physics. 301:127663
Publikováno v:
Microelectronic Engineering. 157:1-6
Anodic aluminum oxide (AAO) templates are generally the most cost-effective mask less nanofabrication processes for synthesis of nanowires, nano-meshes and nanoperiodic structures for several applications. In this present work, the effect of conducti
Autor:
Sudheendran Kooriyattil, Venkata Saravanan Kandasamy, K.C James Raju, Ghanashyam Krishna Mamidipudi
Publikováno v:
Ferroelectrics. 356:158-165
Thin Films of (Ba 0.5 , Sr 0.5 ) TiO 3 have been deposited on quartz substrates by RF magnetron sputtering. The percentage of oxygen in sputtering atmosphere was varied between 25 to 100%. The as-deposited films were x-ray amorphous and crystallized
Autor:
Ghanashyam Krishna Mamidipudi, Praveena Ravipati, Debarun Dhar Purkayastha, V. Sravani Sameera
Publikováno v:
physica status solidi (a). 214:1700335
Ag films of 5 nm thickness were iodized for durations up to 3 h leading to the formation of β-AgI structure. The water contact angle (WCA) for the un-iodized and as-deposited Ag film was 107.2° which is decreased to 70.7° on iodization for 3 h. In
Publikováno v:
Crystallization-Science and Technology
Polycrystalline silicon thin films have attracted the attention of semiconductor industries in the past few decades due to their wide applications in thin film transistors, solar cells, display units and sensors (Schropp & Zeman, 1998; Choi et al., 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66e15d3841ed67b67e565e8185526c2d
http://www.intechopen.com/articles/show/title/metal-induced-crystallization-of-a-si
http://www.intechopen.com/articles/show/title/metal-induced-crystallization-of-a-si
Publikováno v:
Philosophical Magazine; Oct2014, Vol. 94 Issue 30, p3431-3444, 14p
Publikováno v:
European Physical Journal - Applied Physics; Jun2013, Vol. 62 Issue 3, p00-00, 1p
Autor:
Venugopal, Ashapogu1,2 (AUTHOR) venugopal14282@gmail.com, Gnanesh Kumar, Belur Shivappa1,2,3 (AUTHOR) gnaneshkumarbs85@gmail.com, Ahamad Mohiddon, Mahamad1,2,4 (AUTHOR) ahamed.vza@gmail.com, Ghanashyam Krishna, Mamidipudi1,5 (AUTHOR) mgksp@uohyd.ernet.in, Siva Kumar, Nadimpalli2 (AUTHOR) nsksl@uohyd.ernet.in, Mehellou, Youcef1,6 (AUTHOR)
Publikováno v:
Cogent Chemistry. Dec2016, Vol. 2 Issue 1, pN.PAG-N.PAG. 1p.