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Autor:
Felix Edelman, Peter Werner, Horst Hahn, Holger Hoche, Adam G. Balogh, Marta Radecka, Pawel Pasierb, A. Chack, Christian Alof, Katarzyna Zakrzewska, Ghadi Eisenstein, Vissarion Mikhelashvili, S. Seifried
Publikováno v:
Materials Science and Engineering: B. :386-391
Thin films (50‐200 nm) of SnO2TiO2 were deposited on SiO2:(001)Si substrates by RF-sputtering and by molecular beam before they were annealed in vacuum at 200‐900°C. In-situ TEM, XRD, SEM, Raman and IR-spectroscopy were used to analyze the struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4146d625ea1c49d79b12aba8e74baad
https://doi.org/10.1016/s0921-5107(99)00282-2
https://doi.org/10.1016/s0921-5107(99)00282-2
