Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Geza Dezsi"'
Autor:
Olivia Tiburzi, Mekbib Astatke, Geza Dezsi, Konstantinos Gerasopoulos, Daniel Dembner, Rama Venkatasubramanian
Publikováno v:
MEDICAL DEVICES & SENSORS. 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e25e99f2c46514edfead480ca886976a
https://doi.org/10.1002/mds3.10048
https://doi.org/10.1002/mds3.10048
Autor:
Terry M. Tritt, Joseph Poon, Rama Venkatasubramanian, Paul J. Thomas, Bruce Cook, Geza Dezsi, Te Chan, Carl C. Koch
Publikováno v:
Journal of Electronic Materials. 44:1936-1942
The use of advanced materials has resulted in a significant improvement in thermoelectric device conversion efficiency. Three-stage cascade devices were assembled, consisting of nano-bulk Bi2Te3-based materials on the cold side, PbTe and enhanced TAG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52481b641cf5ca74223110e63b953303
https://doi.org/10.1007/s11664-014-3600-9
https://doi.org/10.1007/s11664-014-3600-9
Publikováno v:
Thin Solid Films. 518:S76-S79
We have grown SiGe/Si quantum dot superlattices (QDSLs) via low-pressure chemical vapor deposition (LPCVD) in order to analyze their performance as thin-film solar cells. Self-assembled SiGe quantum dots were included in the base region in order to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2510d6802af0bfaeb3ce88febd34661
https://doi.org/10.1016/j.tsf.2009.10.060
https://doi.org/10.1016/j.tsf.2009.10.060
Publikováno v:
Thin Solid Films. 520:2170-2172
InAs/GaSb type II superlattices (T2SLs) were grown heteroepitaxially, via metallorganic chemical vapor deposition (MOCVD), on GaAs substrates. The 7% lattice mismatch between the T2SL and GaAs substrate was accommodated through the use of a two-step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::861cda2bbbd3321c7559a80076341044
https://doi.org/10.1016/j.tsf.2011.10.007
https://doi.org/10.1016/j.tsf.2011.10.007
Publikováno v:
MRS Proceedings. 1325
We report on our investigation into the use of III-V superlattice structures for thermoelectric (TE) applications. Preliminary review of III-V materials trends indicate that the GaSb/InAs superlattice system should offer one of the best potentials fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88c3f029d90defeff161c05b1b65bd0c
https://doi.org/10.1557/opl.2011.1162
https://doi.org/10.1557/opl.2011.1162
Publikováno v:
Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon).
We have grown Si/Ge nanodot superlattices via low-pressure chemical vapor deposition in order to analyze their performance as thin-film solar cells. Self-assembled Ge nanodots are included in the base region in order to boost absorption of near-infra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e263de46a4eb31bb437ef7f5cfdd5c8
https://doi.org/10.1109/secon.2010.5453843
https://doi.org/10.1109/secon.2010.5453843