Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Geunyoung, Yeom"'
Publikováno v:
Materials; Volume 15; Issue 4; Pages: 1300
The etching properties of C6F6/Ar/O2 in both an inductively coupled plasma (ICP) system and a capacitively coupled plasma (CCP) system were evaluated to investigate the effects of high C/F ratio of perfluorocarbon (PFC) gas on the etch characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56482605f6c55222aaf6b31e4deb14ce
Publikováno v:
Materials (Basel, Switzerland). 15(4)
The etching properties of C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1668ca2b059e00a3e7cc9af94b81f4f0
https://pubmed.ncbi.nlm.nih.gov/35207841
https://pubmed.ncbi.nlm.nih.gov/35207841
Autor:
TaiZhe, Lin, BaoTao, Kang, MinHwan, Jeon, Craig, Huffman, JeaHoo, Jeon, SungJoo, Lee, Wei, Han, JinYong, Lee, SeHan, Lee, GeunYoung, Yeom, KyongNam, Kim
Publikováno v:
ACS applied materialsinterfaces. 7(29)
Two-dimensional (2D) metal dichalcogenides like molybdenum disulfide (MoS2) may provide a pathway to high-mobility channel materials that are needed for beyond-complementary metal-oxide-semiconductor (CMOS) devices. Controlling the thickness of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::521a7098e166733c75ec089347af220b
https://pubmed.ncbi.nlm.nih.gov/26091282
https://pubmed.ncbi.nlm.nih.gov/26091282
Autor:
Sungwoo Park, Kyungchae Yang, Hoseok Lee, Dongwoo Kim, Jongung Baek, Taehun Shim, Jeagun Park, Geunyoung Yeom
Publikováno v:
ECS Journal of Solid State Science & Technology; 2017, Vol. 6 Issue 9, pN148-N154, 7p
Publikováno v:
ECS Meeting Abstracts. :1646-1646
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::657e5529cdfe4d754102e42b56224cf0
https://doi.org/10.1149/ma2010-02/25/1646
https://doi.org/10.1149/ma2010-02/25/1646
Publikováno v:
ECS Meeting Abstracts. :2315-2315
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21c9c07d148d59b616fdd858f77814eb
https://doi.org/10.1149/ma2010-02/41/2315
https://doi.org/10.1149/ma2010-02/41/2315
Publikováno v:
ECS Meeting Abstracts. :2371-2371
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d22974d22cb47a28374ab44ac9721b5
https://doi.org/10.1149/ma2010-02/43/2371
https://doi.org/10.1149/ma2010-02/43/2371
Publikováno v:
ECS Meeting Abstracts. :1541-1541
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76c64ac6b44a226c272e4bb89cc9c07
https://doi.org/10.1149/ma2010-02/22/1541
https://doi.org/10.1149/ma2010-02/22/1541
Publikováno v:
ECS Meeting Abstracts. :2072-2072
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e84264919c00839396d5f16e02b21cc
https://doi.org/10.1149/ma2010-02/35/2072
https://doi.org/10.1149/ma2010-02/35/2072
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May2011, Vol. 29 Issue 3, p031805-1-031805-7, 7p