Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Geunyong Lee"'
Publikováno v:
Journal of Electromagnetic Waves and Applications. 30:225-231
A directional coupler with a high isolation characteristic for radio frequency identification reader systems is presented. Compensation capacitors are used to improve the inherently poor isolation of a microstrip directional coupler due to unequal ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52e2d787cc4d9bde0e497abdaf8d6b8a
https://doi.org/10.1080/09205071.2015.1105154
https://doi.org/10.1080/09205071.2015.1105154
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 62:558-562
A single-chip power amplifier (PA) with a reconfigurable output-matching network is presented for fourth-generation multiband mobile phone applications. The multiband PA (MBPA) consists of an amplifier and a reconfigurable output-matching network [a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2922c04e9bb7d7c917c65fa1614a0773
https://doi.org/10.1109/tcsii.2015.2407775
https://doi.org/10.1109/tcsii.2015.2407775
Publikováno v:
IEEE Microwave and Wireless Components Letters. 26:58-60
A dual-path multi-band power amplifier (PA) with a tunable output matching network is presented for long-term- evolution (LTE) handset applications. To optimize output load impedances for various power regions with various frequency bands, an impedan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12607408d7731d30dee01985de2448e4
https://doi.org/10.1109/lmwc.2015.2505628
https://doi.org/10.1109/lmwc.2015.2505628
Publikováno v:
Microwave and Optical Technology Letters. 56:2881-2884
A multiband power amplifier (MBPA) with a switch-based reconfigurable output matching network is presented for long-term evolution handset applications. The MBPA is designed in a dual-path configuration to improve efficiency in two different power le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::810ec359a84d5f4ece8966b7f1a554f9
https://doi.org/10.1002/mop.28730
https://doi.org/10.1002/mop.28730
Publikováno v:
Microwave and Optical Technology Letters. 56:1175-1178
A power amplifier (PA) for multiband applications implemented with a tunable load modulation technique is presented. The broadband output matching can be done by load modulation implemented by modification of the characteristic impedance (ZC) of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c1185ff298366f209a6f889c5d91e3
https://doi.org/10.1002/mop.28286
https://doi.org/10.1002/mop.28286
Autor:
Geunyong Lee, Jongsoo Lee
Publikováno v:
IEICE Electronics Express. 8:956-962
This paper presents analytic expressions for T-type chain matching network synthesis of the power amplifier (PA) to enhance the performance at low output powers via a load impedance adjustment. Here, a parallel power amplifier for WCDMA B1 (1920-1980
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9396461e02bc7b5041ca28d7252387a
https://doi.org/10.1587/elex.8.956
https://doi.org/10.1587/elex.8.956
Publikováno v:
IEEE Microwave and Wireless Components Letters. 24:382-384
A lumped-element directional coupler with a high isolation characteristic for mobile RFID reader systems is proposed and experimentally demonstrated. Compared with the conventional lumped-element circuit, the proposed structure utilizes compensation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::079a40d31cbb520a4d67d00517d5760f
https://doi.org/10.1109/lmwc.2014.2313586
https://doi.org/10.1109/lmwc.2014.2313586
Publikováno v:
RWS
This paper presents a silicon germanium (SiGe) HBT power amplifier (PA) for mobile long term evolution (LTE) applications. The PA consists of a 2-stage cascade structure for high gain and 3 matching networks; input, inter-stage, and output matching n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49798751815689b4d457a941b0ca7804
https://doi.org/10.1109/sirf.2013.6489456
https://doi.org/10.1109/sirf.2013.6489456
Publikováno v:
RWS
A SiGe HBT mode switching power amplifier (PA) for 835MHz long-term-evolution (LTE) applications has been realized in a BiCMOS technology. The PA has dual 2-stage PAs optimized for operations at high and low power levels. The mode of operation is con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7811bfebd112dbc7d03ed7d39fe53208
https://doi.org/10.1109/rws.2013.6486700
https://doi.org/10.1109/rws.2013.6486700
Publikováno v:
2012 IEEE/MTT-S International Microwave Symposium Digest.
This paper presents a single chip multiband power amplifier (MBPA) using a proposed active load modulation (ALM) technique. Based on Doherty PA's concept, the single chip MBPA consists of a main amplifier, an auxiliary amplifier, and transmission lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cb8fa408aa504f05c1e149bd41d2675
https://doi.org/10.1109/mwsym.2012.6258277
https://doi.org/10.1109/mwsym.2012.6258277