Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Geunyong Bak"'
Publikováno v:
IEEE Access, Vol 9, Pp 137514-137523 (2021)
The methodological approach of hammering multiple rows is newly proposed to evaluate today’s SDRAMs, employed with in-DRAM mitigation circuits. The multiple rows are selected based on the one-row hammering test (single row hammering without refresh
Externí odkaz:
https://doaj.org/article/c4e20534140d4565af4a40dd9d059d34
Publikováno v:
IEEE Access, Vol 9, Pp 63002-63011 (2021)
This paper shows that an intermittent AC coupling defect occurring in a DDR4 data channel will cause more intermittent errors in DDR4, compared to such defect in DDR3. The intermittent AC coupling defect occurs due to intermittent fracture in DDR4 pa
Externí odkaz:
https://doaj.org/article/0c6d5ab3ffb54b09a87739b39cee802b
Publikováno v:
IEEE Access, Vol 9, Pp 137514-137523 (2021)
The methodological approach of hammering multiple rows is newly proposed to evaluate today’s SDRAMs, employed with in-DRAM mitigation circuits. The multiple rows are selected based on the one-row hammering test (single row hammering without refresh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b482b03bdeaf53664cc78b211950055
https://doi.org/10.1109/access.2021.3117601
https://doi.org/10.1109/access.2021.3117601
Publikováno v:
IEEE Access, Vol 9, Pp 63002-63011 (2021)
This paper shows that an intermittent AC coupling defect occurring in a DDR4 data channel will cause more intermittent errors in DDR4, compared to such defect in DDR3. The intermittent AC coupling defect occurs due to intermittent fracture in DDR4 pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::141082f381b5b64f5bf52a9dc9cc2640
https://doi.org/10.1109/access.2021.3074595
https://doi.org/10.1109/access.2021.3074595
Autor:
Geunyong Bak, Sanghyeon Baeg
Publikováno v:
IEEE Transactions on Nuclear Science. 67:2370-2381
In this article, we investigate neutron-induced failures of the Galaxy S7 Edge smartphone (released 2016). Anomalous changes in the neutron-irradiated Galaxy smartphone are described in detail (e.g., device current increments up to 270 mA or overheat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8492cb09150ed167d33b759dc07184
https://doi.org/10.1109/tns.2020.3029786
https://doi.org/10.1109/tns.2020.3029786
Publikováno v:
Electronics
Volume 10
Issue 12
Electronics, Vol 10, Iss 1445, p 1445 (2021)
Volume 10
Issue 12
Electronics, Vol 10, Iss 1445, p 1445 (2021)
This paper measures bit error rate degradation in DDR4 due to crack in fine pitch ball grid array (FBGA) package solder ball. Thermal coefficient mismatch between the package and printed circuit board material causes cracks to occur in solder balls.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4433a4500afa746b743d84b52db59bd2
Publikováno v:
Microelectronics Reliability. :277-281
Open defects in power pins can only be diagnosed indirectly, and these diagnoses are a challenging task in failure analysis due to the failure signature's aliasing to other issues. Open defects cannot be detected by traditional DC-type test methods a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::269f1909998a56b033b3e7375fa9ab66
https://doi.org/10.1016/j.microrel.2018.06.104
https://doi.org/10.1016/j.microrel.2018.06.104
Autor:
Richard Wong, Kyung-Bae Park, Myungsang Park, Donghyuk Yun, Shi-Jie Wen, Sanghyeon Baeg, Chulseung Lim, Geunyong Bak
Publikováno v:
Microelectronics Reliability. 80:85-90
This paper shares the effects of row hammer fault through high-energy proton radiation. The significance of row hammer fault is highlighted in terms of two different technologies in DDR4 SDRAM. Row hammer stress prevents nearby storage cells from mai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f42a89ba1ad9f2e0fb1d02c55c2264ab
https://doi.org/10.1016/j.microrel.2017.11.018
https://doi.org/10.1016/j.microrel.2017.11.018
Publikováno v:
Microelectronics Reliability. 69:100-108
To evaluate a device sensitivity against alpha particles, traditional Single Event Effect (SEE) tests are conducted using isotope source, which emits particles just above 5 MeV. Relentless downscaling and higher packing density have driven the demand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6159d4af02f07d2e642b50083a2cb8b0
https://doi.org/10.1016/j.microrel.2016.12.004
https://doi.org/10.1016/j.microrel.2016.12.004
Publikováno v:
Vacuum. 183:109836
A theoretical and experimental investigation of Bragg's rule in low energy loss region where charge exchange straggling can be ignored is presented. Energy-loss straggling of 5.486 MeV alpha particles in air and 5N purity constituent gases was measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c26b575ee631f43539eac4da078d294d
https://doi.org/10.1016/j.vacuum.2020.109836
https://doi.org/10.1016/j.vacuum.2020.109836