Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Geung Ho Kim"'
Autor:
Geung Ho Kim, Dongkyu Cha, Ning Lu, SeongYong Park, Min Jae Ko, Moon J. Kim, Sang Hoon Lee, Tae Hun Lee, Sung-Soo Kim, Jie Huang, Mingun Lee, Jiyoung Kim, Byeong-Hyeok Sohn, Young Joon Suh
Publikováno v:
Micron. 46:35-42
Three-dimensional nanostructures of TiO2 related materials including nanotubes, electron acceptor materials in hybrid polymer solar cells, and working electrodes of dye sensitized solar cells (DSSCs) were visualized by electron tomography as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dea7885434b5ee43c2018e0fa8539166
https://doi.org/10.1016/j.micron.2012.12.002
https://doi.org/10.1016/j.micron.2012.12.002
Publikováno v:
Scripta Materialia. 44:331-336
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e711c03b7fb70d6c71d54e9d00cb6d8
https://doi.org/10.1016/s1359-6462(00)00581-9
https://doi.org/10.1016/s1359-6462(00)00581-9
Publikováno v:
Journal of Materials Science. 36:1695-1700
In an effort to protect a RBSC (reaction-bonded silicon carbide) reaction tube, SiC films were chemically vapor deposited on RBSC substrates. SiC films were prepared to investigate the effect of the input gas ratios (dilute ratio, α = PH2/PMTS = QH2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd7e4ba2cf7d6bae5a42fc3eda8bb2a3
https://doi.org/10.1023/a:1017508205412
https://doi.org/10.1023/a:1017508205412
Publikováno v:
Thin Solid Films. 346:169-173
SOI (silicon on insulator) was fabricated through the direct bonding of a hydrophilic single crystal Si wafer and a thermally oxidized SiO2 film. The hydrophilic Si was formed by treating the surface with modified SC-1 (NH4OH:H2O2:H2O) solution. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dccd10b2374be9259bdf4d2c6c4dd202
https://doi.org/10.1016/s0040-6090(98)01468-0
https://doi.org/10.1016/s0040-6090(98)01468-0
Publikováno v:
Journal of Materials Science. 32:6101-6106
(1 0 0) Si and 4° off (1 0 0) Si were oxidized in dry oxygen, and the differences in thermal oxidation behaviour, oxidation-induced stacking faults and capacitance-voltage characteristics were investigated. The thickness of the oxide produced by oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c83cadfecf795b7741e3aee90589bdd
https://doi.org/10.1023/a:1018648002412
https://doi.org/10.1023/a:1018648002412
Publikováno v:
Journal of Materials Science Letters. 18:755-757
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e761d0376b7b0d6ff1089bf71958d515
https://doi.org/10.1023/a:1006664429348
https://doi.org/10.1023/a:1006664429348
Publikováno v:
Scripta Materialia. 44:2523
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c802db74632fc83b258147db0287a50
https://doi.org/10.1016/s1359-6462(01)01085-5
https://doi.org/10.1016/s1359-6462(01)01085-5
Publikováno v:
Journal of Materials Science; Apr2001, Vol. 36 Issue 7, p1695-1700, 6p
Autor:
H. T. David, Geung Ho Kim
Publikováno v:
Journal of Applied Probability. 15:523-530
Fix a bivariate distribution F on X × Y, considered as a pair (α, {Fx }), where α is a marginal distribution on X and {Fx } is a collection of conditional distributions on Y. For essentially every (β,{Gx }) satisfying a certain pair of moment con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9839e4e9319270cfb7529523205c824a
https://doi.org/10.2307/3213115
https://doi.org/10.2307/3213115