Zobrazeno 1 - 10
of 14
pro vyhledávání: '"GeunYoung Yeom"'
Publikováno v:
Materials, Vol 15, Iss 4, p 1300 (2022)
The etching properties of C6F6/Ar/O2 in both an inductively coupled plasma (ICP) system and a capacitively coupled plasma (CCP) system were evaluated to investigate the effects of high C/F ratio of perfluorocarbon (PFC) gas on the etch characteristic
Externí odkaz:
https://doaj.org/article/481b7b37769f40999fb48b57c420d485
Autor:
Jisoo Oh, Long Wen, Hyunwoo Tak, Heeju Kim, Gyowun Kim, Jongwoo Hong, Wonjun Chang, Dongwoo Kim, Geunyoung Yeom
Publikováno v:
Materials, Vol 14, Iss 16, p 4448 (2021)
Transparent heat films (THFs) are attracting increasing attention for their usefulness in various applications, such as vehicle windows, outdoor displays, and biosensors. In this study, the effects of induction power and radio frequency on the weldin
Externí odkaz:
https://doaj.org/article/14cbfc74996540c7b41ce2ef693dd1ba
Publikováno v:
Materials (Basel, Switzerland). 15(4)
The etching properties of C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1668ca2b059e00a3e7cc9af94b81f4f0
https://pubmed.ncbi.nlm.nih.gov/35207841
https://pubmed.ncbi.nlm.nih.gov/35207841
Autor:
TaiZhe, Lin, BaoTao, Kang, MinHwan, Jeon, Craig, Huffman, JeaHoo, Jeon, SungJoo, Lee, Wei, Han, JinYong, Lee, SeHan, Lee, GeunYoung, Yeom, KyongNam, Kim
Publikováno v:
ACS applied materialsinterfaces. 7(29)
Two-dimensional (2D) metal dichalcogenides like molybdenum disulfide (MoS2) may provide a pathway to high-mobility channel materials that are needed for beyond-complementary metal-oxide-semiconductor (CMOS) devices. Controlling the thickness of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::521a7098e166733c75ec089347af220b
https://pubmed.ncbi.nlm.nih.gov/26091282
https://pubmed.ncbi.nlm.nih.gov/26091282
Autor:
Sungwoo Park, Kyungchae Yang, Hoseok Lee, Dongwoo Kim, Jongung Baek, Taehun Shim, Jeagun Park, Geunyoung Yeom
Publikováno v:
ECS Journal of Solid State Science & Technology; 2017, Vol. 6 Issue 9, pN148-N154, 7p
Publikováno v:
ECS Meeting Abstracts. :1646-1646
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::657e5529cdfe4d754102e42b56224cf0
https://doi.org/10.1149/ma2010-02/25/1646
https://doi.org/10.1149/ma2010-02/25/1646
Publikováno v:
ECS Meeting Abstracts. :2315-2315
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21c9c07d148d59b616fdd858f77814eb
https://doi.org/10.1149/ma2010-02/41/2315
https://doi.org/10.1149/ma2010-02/41/2315
Publikováno v:
ECS Meeting Abstracts. :1541-1541
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76c64ac6b44a226c272e4bb89cc9c07
https://doi.org/10.1149/ma2010-02/22/1541
https://doi.org/10.1149/ma2010-02/22/1541
Publikováno v:
ECS Meeting Abstracts. :2371-2371
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d22974d22cb47a28374ab44ac9721b5
https://doi.org/10.1149/ma2010-02/43/2371
https://doi.org/10.1149/ma2010-02/43/2371
Publikováno v:
ECS Meeting Abstracts. :2072-2072
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e84264919c00839396d5f16e02b21cc
https://doi.org/10.1149/ma2010-02/35/2072
https://doi.org/10.1149/ma2010-02/35/2072