Výsledky vyhledávání - "Geun-Young Choi"

BEOL process integrations with Cu/FSG wiring at 90 nm design-rule DDR DRAM and their effects on yield, refresh time, and wafer-level reliability

Autor: Geun-Young Choi, Dong-Chul Koo, Sungwook Park, Soo-Hyun Kim, Ahn Sang Tae, Ja-Chun Ku, Seo-Min Kim, Hyunchul Sohn, Jae-Kwan Jung, Jinwoong Kim, Nohiung Kwak, Tae-Oh Jung, Jin-Ki Jung, Hyung-Soon Park, Gyu-Hyun Kim

Publikováno v: 2007 IEEE International Interconnect Technology Conferencee.

For the first time, this paper presents the results of successful integrations of Cu wiring into a production 512 Mb/90 nm design-rule stacked capacitor and recessed gate DDR (double data rate) DRAM technology, focusing on the effects of Cu integrati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::74ab5cd3fda469c1062312fed8ccf200
https://doi.org/10.1109/iitc.2007.382367

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BEOL process integrations with Cu/FSG wiring at 90 nm design-rule DDR DRAM and their effects on yield, refresh time, and wafer-level reliability.

Autor: Nohiung Kwak, Sang-Tae Ahn, Hyung-Soon Park, Seo-Min Kim, Jin-Ki Jung, Gyu-Hyun Kim, Geun-Young Choi, Dong-Chul Koo, Tae-Oh Jung, Ja-Chun Ku, Jae-Kwan Jung, Jinwoong Kim, Sungwook Park, Hyunchul Sohn, Soo-Hyun Kim

Publikováno v: 2007 IEEE International Interconnect Technology Conference; 2007, p150-152, 3p

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