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Publikováno v:
Journal of the Korean Physical Society. 72:406-411
The built-in voltage (V bi ) of a Au/n-GaAs Schottky barrier diode was examined by using electroreflectance (ER) spectroscopy. The ER spectra were measured at various modulation voltages (v ac ) and dc bias voltages (V bias ). The interface electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6511492e886132659195a8b480c473c
https://doi.org/10.3938/jkps.72.406
https://doi.org/10.3938/jkps.72.406
