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pro vyhledávání: '"Geun-Hyoung Kim"'
Publikováno v:
Journal of the Korean Physical Society. 72:406-411
The built-in voltage (V bi ) of a Au/n-GaAs Schottky barrier diode was examined by using electroreflectance (ER) spectroscopy. The ER spectra were measured at various modulation voltages (v ac ) and dc bias voltages (V bias ). The interface electric
Publikováno v:
Journal of the Korean Physical Society; Feb2018, Vol. 72 Issue 3, p406-411, 6p