Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Geun Yeom"'
Publikováno v:
Journal of the Korean Institute of Illuminating and Electrical Installation Engineers. 28:113-120
In this paper, designing of an earthing system in accordance with international standards with regard to 22.9kV-y multi-grounded neutral system is discussed and confirmed that the consumer`s earthing system can be a part of a global earthing system b
Publikováno v:
Journal of the Korean Institute of Illuminating and Electrical Installation Engineers. 28:91-96
Autor:
Jae-Hyung Jang, Geun Yeom Young, Dae-Hyun Kim, Sang Park Duk, Tae-Woo Kim, Byeong Lim Ok, Jin-Koo Rhee, Jong-In Song
Publikováno v:
IEEE Electron Device Letters. 28:1086-1088
The characteristics of 0.15- mum InAlAs/InGaAs pseudomorphic high-electron mobility transistors (p-HEMTs) that were fabricated using the Ne-based atomic layer etching (ALET) technology and the Ar-based conventional reactive ion etching (RIE) technolo
Autor:
Hyoun Woo Kim, Ju Hyun Myung, Jong Woo Lee, Hyung-Sun Kim, Keeho Kim, Jeong-Yeol Jang, Tae-Ho Yoon, Sung Kim, Dae-Kyu Choi, Chin-Wook Chung, Geun Yeom, Jae-Min Myoung, Hyoung-June Kim
Publikováno v:
Journal of Materials Science; Aug2006, Vol. 41 Issue 15, p5040-5042, 3p, 2 Diagrams, 1 Graph