Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Geun Hyeong Park"'
Autor:
Se Hyun Kim, Younghwan Lee, Dong Hyun Lee, Geun Hyeong Park, Hyun Woo Jeong, Kun Yang, Yong Hyeon Cho, Young Yong Kim, Min Hyuk Park
Publikováno v:
Journal of Advanced Ceramics, Vol 13, Iss 3, Pp 282-292 (2024)
(Hf,Zr)O2 offers considerable potential for next-generation semiconductor devices owing to its nonvolatile spontaneous polarization at the nanoscale. However, scaling this material to sub-5 nm thickness poses several challenges, including the formati
Externí odkaz:
https://doaj.org/article/85af6f84cd88455aa281563f96ad9a66
Autor:
Dong Hyun Lee, Geun Hyeong Park, Se Hyun Kim, Ju Yong Park, Kun Yang, Stefan Slesazeck, Thomas Mikolajick, Min Hyuk Park
Publikováno v:
InfoMat, Vol 4, Iss 12, Pp n/a-n/a (2022)
Abstract A continuous exponential rise has been observed in the storage and processing of the data that may not curtail in the foreseeable future. The required data processing speed and power consumption are restricted by the buses between the logic
Externí odkaz:
https://doaj.org/article/60045bacabfe4fe8a29068622d274456
Autor:
Geun Hyeong Park, Dong Hyun Lee, Hyojun Choi, Taegyu Kwon, Yong Hyeon Cho, Se Hyun Kim, Min Hyuk Park
Publikováno v:
ACS Applied Electronic Materials. 5:642-663
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0b38894e911003d55516eafbf4ffa50
https://doi.org/10.1021/acsaelm.2c01615
https://doi.org/10.1021/acsaelm.2c01615
Autor:
Kun Yang, Se Hyun Kim, Hyun Woo Jeong, Dong Hyun Lee, Geun Hyeong Park, Younghwan Lee, Min Hyuk Park
Publikováno v:
Chemistry of Materials. 35:2219-2237
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::579921844c717818bffdb1bcf8450625
https://doi.org/10.1021/acs.chemmater.2c03379
https://doi.org/10.1021/acs.chemmater.2c03379
Autor:
Kun Yang, Gi-Yeop Kim, Jin Joo Ryu, Dong Hyun Lee, Ju Yong Park, Se Hyun Kim, Geun Hyeong Park, Geun Taek Yu, Gun Hwan Kim, Si Young Choi, Min Hyuk Park
Publikováno v:
Materials Science in Semiconductor Processing. 164:107565
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b22434e9cb7323b96721c4550d1a5fdb
https://doi.org/10.1016/j.mssp.2023.107565
https://doi.org/10.1016/j.mssp.2023.107565
Autor:
Se Hyun Kim, Geun Hyeong Park, Eun Been Lee, Dong-Hyun Lee, Ju Yong Park, Je In Lee, Geun Taek Yu, Kun Yang, Min Hyuk Park
Publikováno v:
Korean Journal of Metals and Materials. 59:849-856
Ferroelectricity can be induced in fluorite-structured oxides such as HfO2 and ZrO2, a feature of increasing interest in both academia and industry. Initially, most research focused on solid solution films, but recently, it has been suggested that na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91d8031c35527ab1be8145b7eb1d358c
https://doi.org/10.3365/kjmm.2021.59.12.849
https://doi.org/10.3365/kjmm.2021.59.12.849
Autor:
Dong Hyun Lee, Geun Hyeong Park, Se Hyun Kim, Ju Yong Park, Kun Yang, Stefan Slesazeck, Thomas Mikolajick, Min Hyuk Park
Publikováno v:
InfoMat. 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c5ee6db901e201a0983c87951245dc9
https://doi.org/10.1002/inf2.12389
https://doi.org/10.1002/inf2.12389
Publikováno v:
New Physics: Sae Mulli. 71:890-900
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f79d1edda35e8e4290995157a53fd68
https://doi.org/10.3938/npsm.71.890
https://doi.org/10.3938/npsm.71.890
Autor:
Dong-Hyun Lee, Geun Hyeong Park, Min Hyuk Park, Kwang Ho Kim, Ju Yong Park, Se Hyun Kim, Eun Been Lee, Kun Yang, Geun Taek Yu
Publikováno v:
ACS Applied Electronic Materials. 4:1369-1380
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c30b5db3dec2149cadde155ef6acfbc2
https://doi.org/10.1021/acsaelm.1c00792
https://doi.org/10.1021/acsaelm.1c00792
Autor:
Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung‐Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2e69d6e15b4a9bccf91e8854f42c3ee
https://pubmed.ncbi.nlm.nih.gov/35952355
https://pubmed.ncbi.nlm.nih.gov/35952355