Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Geum-Joo Ra"'
Autor:
Byung-Jae Kang, Seulah Kim, Geum-Joo Ra, Dong-Chul Park, Tae-Hoon Huh, Ronald N. Reece, Shin-Woo Kang, Jong-Oh Lee, Min-Sung Lee, Leonard M. Rubin
Publikováno v:
Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).
The temperature effect for buried channel PMOS transistor characteristics was investigated. Generally, only dose, energy and implant angle have been considered as the major parameters for process matching between different high current implanters in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9f8a7e0336ab9a2f20f83bb5604a334
https://doi.org/10.1109/iwjt.2008.4540013
https://doi.org/10.1109/iwjt.2008.4540013
Autor:
Tae-Hoon Huh, Byung-Jae Kang, Geum-Joo Ra, Kyung-Won Lee, Steve Kim, Ronald N. Reece, Leonard M. Rubin, Michael S. Ameen, Won-Min Moon, Min-Sung Lee, Young-Ho Lee, Jong-Oh Lee, Dong-Chul Park, Jung-Youn Lim, Youn-Soo Kim, Jae-Sang Ro, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
The temperature effect for buried channel PMOS transistor characteristics was investigated. Generally, only dose, energy and implant angle have been considered as the major parameters for process matching between different high current implanters in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::631df2e06f94c1dc7395429ec3bf3452
https://doi.org/10.1063/1.3033690
https://doi.org/10.1063/1.3033690
Autor:
Joonho Lee, Jaewoong Choi, Jungsoo An, Seonho Ryu, Kyung Won Lee, Jonghoon Kim, Geum Joo Ra, Steve Kim, H. T. Cho, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Implantation of the molecular ion B18H22+ has significant productivity benefits since very high particle current densities are possible with a low electrical beam current. We evaluated several applications of B18H22 in sub‐70 nm DRAM manufacturing,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1129544da50167bf087dc3ebef2795d
https://doi.org/10.1063/1.3033658
https://doi.org/10.1063/1.3033658
Autor:
Kyung Won Lee, Jin Ku Lee, Jae Geun Oh, Tae Hoon Huh, Min Ae Ju, Seung Joon Jeon, Ja Chun Ku, Sung Ki Park, Steve Kim, Dae Ho Yoon, Geum Joo Ra, Mark A. Harris, Ronald N. Reece, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Basic characteristics of ClusterBoron™ (B18H22) implantation were investigated for improving contact resistance in DRAM devices. Generally, 49BF2 has been widely used for contact implant application in DRAM manufacturing because of its higher produ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d40a7de625665ab508fdb3dc1d8c81
https://doi.org/10.1063/1.3033673
https://doi.org/10.1063/1.3033673
Autor:
Jin-Ku Lee, Min-Ae Ju, Jae-Geun Oh, Sun-Hwan Hwang, Seung-Joon Jeon, Ja-Chun Ku, Sungki Park, Kyung-Won Lee, Steve Kim, Geum-Joo Ra, Ron Reece, Leonard M. Rubin, W. A. Krull, H. T. Cho, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Implantation of B18H22 molecules at 80 keV and doses up to 4×1016 cm−2 were evaluated for the application of p‐type counterdoping of in situ n‐type doped polysilicon gates. Compared to conventional B implants, molecular implantation provides g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5c8bcd0641681243f5fb677668d230c
https://doi.org/10.1063/1.3033645
https://doi.org/10.1063/1.3033645
A study of self-activation and low temperature furnace annealing for source/drain formation in AMLCD
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
Phosphorous and boron self activation followed by low temperature (450/spl deg/C) furnace annealing were investigated for source/drain formation in polysilicon thin films. The effect of hydrogen content in the ion beam was thoroughly studied, For pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f81df70da60aae9b696e0da7cb395a6
https://doi.org/10.1109/iit.1999.812072
https://doi.org/10.1109/iit.1999.812072
Autor:
Tae-Hoon Huh, Byung-Jae Kang, Geum-Joo Ra, Kyung-Won Lee, Kim, Steve, Reece, Ronald N., Rubin, Leonard M., Ameen, Michael S., Won-Min Moon, Min-Sung Lee, Young-Ho Lee, Jong-Oh Lee, Dong-Chul Park, Jung-Youn Lim, Youn-Soo Kim, Jae-Sang Ro
Publikováno v:
AIP Conference Proceedings; 11/3/2008, Vol. 1066 Issue 1, p87-90, 4p, 3 Charts, 6 Graphs
Autor:
Tae-Hoon Huh, Byung-Jae Kang, Geum-Joo Ra, Shin-Woo Kang, Kim, S., Reece, R., Rubin, L.M., Min-Sung Lee, Jong-Oh Lee, Dong-Chul Park
Publikováno v:
Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08); 2008, p39-42, 4p
Publikováno v:
1998 International Conference on Ion Implantation Technology Proceedings (Cat No98EX144); 1999, Issue 1, p142-142, 1p
Conference
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