Zobrazeno 1 - 10
of 426
pro vyhledávání: '"Gessner, Thomas"'
Autor:
Mueller, Steve, Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T., Qu, Xin-Ping
Publikováno v:
Semiconductor Conference Dresden (SCD), 27-28 Sept. 2011, Dresden, Germany; DOI: 10.1109/SCD.2011.6068736
In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner mater
Autor:
Dhakal, Dileep, Waechtler, Thomas, E. Schulz, Stefan, Gessner, Thomas, Lang, Heinrich, Mothes, Robert, Tuchscherer, Andre
This article has been published online on 21st May 2014, in Journal of Vacuum Science & Technology A: Vac (Vol.32, Issue 4): http://scitation.aip.org/content/avs/journal/jvsta/32/4/10.1116/1.4878815?aemail=author DOI: 10.1116/1.4878815 This article m
Publikováno v:
8th International Conference on Solid-State and Integrated Circuit Technology 2006 (ICSICT '06), Oct. 23-26, 2006, Shanghai, China. Proceedings, p. 2184-2186
Spectroscopic ellipsometry is emerging as a routine tool for in-situ and ex-situ thin-film characterization in semiconductor manufacturing. For interconnects in ULSI circuits, diffusion barriers of below 10 nm thickness are required and precise thic
Autor:
Waechtler, Thomas, Roth, Nina, Mothes, Robert, Schulze, Steffen, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael
Publikováno v:
ECS Transactions, Vol. 25, No. 4, pp. 277-287 (2009); Digital Object Identifier (DOI): 10.1149/1.3205062
The atomic layer deposition (ALD) of copper oxide films from [(nBu3P)2Cu(acac)] and wet oxygen on SiO2 and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on SiO2, along with
Autor:
Waechtler, Thomas, Oswald, Steffen, Roth, Nina, Jakob, Alexander, Lang, Heinrich, Ecke, Ramona, Schulz, Stefan E., Gessner, Thomas, Moskvinova, Anastasia, Schulze, Steffen, Hietschold, Michael
Publikováno v:
Journal of The Electrochemical Society, Vol. 156, No. 6, pp. H453-H459 (2009); Digital Object Identifier (DOI): 10.1149/1.3110842
The thermal atomic layer deposition (ALD) of copper oxide films from the non-fluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [(nBu3P)2Cu(acac)], and wet O2 on Ta, TaN, Ru and SiO2 substrates at temperatures of < 16
Autor:
Geßner, Thomas, Schulz, Stefan E., Hiller, Karla, Otto, Thomas, Radehaus, Christian, Dötzel, Wolfram, Müller, Dietmar, Löbner, Bernd, Wanielik, Gerd, Neubert, Ulrich, Lutz, Josef, Lang, Heinrich
Der Siegeszug der Mikroelektronik ist faszinierend. In den vergangenen Jahrzehnten bestimmte die Mikroelektronik das Geschehen in der Informationstechnik: Immer leistungsstärkere Computer, vernetzte Systeme und das Internet sind ohne Mikroelektronik
Autor:
Steinebach, Mario, Friebel, Alexander, Häckel-Riffler, Christine, Tzschucke, Volker, Dötzel, Wolfram, Müller, Egon, Gäse, Thomas, Hildebrand, Torsten, Weidlich, Dieter, Hausstädtler, Uwe, Köchel, Peter, Matthes, Klaus-Jürgen, Kohler, Thomas, Neugebauer, Reimund, Köhler, Eberhard, Meyer, Lothar W., Mennig, Günter, Michael, Hannes, Tenberge, Peter, Fischer, Herwig, Frei, Bertram, Fischer, Andreas, Hoffmann, Karl Heinz, Müller, Dietmar, Geßner, Thomas, Baum, Mario, Protzel, Peter, Krems, Josef F., Wanielik, Gerd, Scheunert, Ulrich, Maißer, Peter, Hendel, Klaus, Mählisch, Mirko, Brunnett, Guido, Spanner-Ulmer, Birgit, Richter, Frank, Zahn, Dietrich R.T., Becker, Bettina M., Tytko, Dagmar, Thießen, Friedrich, Luderer, Bernd, Gerlach, Lutz, Pawlowsky, Peter, Moldaschl, Manfred F., Schulz, Klaus-Peter, Zanger, Cornelia, Reichel, Ina, Jurczek, Peter, Bocklisch, Steffen, Mehnert, Elke
3 mal im Jahr erscheinende Zeitschrift über aktuelle Themen der TU Chemnitz
Autor:
Dhakal, Dileep, Waechtler, Thomas, E. Schulz, Stefan, Mothes, Robert, Lang, Heinrich, Gessner, Thomas
This poster was presented in the Materials for Advanced Metallization (MAM) 2014 Conference in Chemnitz, Germany. Abstract: Atomic Layer Deposition (ALD) has emerged as an ubiquitous method for the deposition of conformal and homogeneous ultra-thin f
Autor:
Dhakal, Dileep, Waechtler, Thomas, E. Schulz, Stefan, Mothes, Robert, Moeckel, Stefan, Lang, Heinrich, Gessner, Thomas
This talk was presented in the 14th International Conference on Atomic Layer Deposition (ALD 2014) in Kyoto, Japan on 18th June 2014. Abstract Atomic Layer Deposition (ALD) is emerging as a ubiquitous method for the deposition of conformal and homoge
Autor:
Melzer, Marcel, Waechtler, Thomas, Müller, Steve, Fiedler, Holger, Hermann, Sascha, Rodriguez, Raul D., Villabona, Alexander, Sendzik, Andrea, Mothes, Robert, Schulz, Stefan E., Zahn, Dietrich R.T., Hietschold, Michael, Lang, Heinrich, Gessner, Thomas
Publikováno v:
Microelectron. Eng. 107, 223-228 (2013). Digital Object Identifier: 10.1016/j.mee.2012.10.026
The following is the accepted manuscript of the original article: Marcel Melzer, Thomas Waechtler, Steve Müller, Holger Fiedler, Sascha Hermann, Raul D. Rodriguez, Alexander Villabona, Andrea Sendzik, Robert Mothes, Stefan E. Schulz, Dietrich R.T. Z