Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Gert J. Leusink"'
Autor:
Steven Consiglio, Durga Misra, Dina H. Triyoso, Yuvraj Patel, Cory Wajda, Gert J. Leusink, Angelique Raley, Gyana Pattanaik, Kandabara Tapily, Christopher Cole, Robert D. Clark
Publikováno v:
ECS Transactions. 104:35-44
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40dced157bffd2dd03c72f1f50217724
https://doi.org/10.1149/10403.0035ecst
https://doi.org/10.1149/10403.0035ecst
Autor:
Robert D. Clark, Jae Hur, Steven Consiglio, Zheng Wang, Asif Islam Khan, K. Tapily, Shimeng Yu, Muhammad Mainul Islam, Nujhat Tasneem, Winston Chern, Hang Chen, Gert J. Leusink, Dina H. Triyoso
Publikováno v:
IEEE Electron Device Letters. 42:1156-1159
Despite tremendous interests in ferroelectric field-effect transistors (FEFETs) for embedded, data-centric applications, the fundamental trade-offs between memory window (MW) and write voltage to optimize performance remains poorly understood. To tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c5bf73d69b54be8ba3148abd924e622
https://doi.org/10.1109/led.2021.3088388
https://doi.org/10.1109/led.2021.3088388
Autor:
Gert J. Leusink, Vidya Kaushik, Kandabara Tapily, Steven Consiglio, Durga Misra, Robert D. Clark, Pengxiang Zhao, Cory Wajda, Dina H. Triyoso
Publikováno v:
ECS Transactions. 97:13-20
Recently, multilevel Resistive RAM (ReRAM) stacks have been demonstrated to have promising applications related to inference and learning in artificial intelligence. However, extensive studies on energy efficiency, repeatability, and retention during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad79389874efd89b7c63734e6714f10e
https://doi.org/10.1149/09703.0013ecst
https://doi.org/10.1149/09703.0013ecst
Autor:
Aseel Zeinati, Durga Misra, Dina H. Triyoso, Robert Clark, Kandabara Tapily, Steven Consiglio, Cory S Wajda, Gert J Leusink
Publikováno v:
ECS Meeting Abstracts. :806-806
Recently, HfO2-based resistive random-access memory (RRAM) devices have shown promise as candidates for in-memory computing applications. By engineering the distribution of defects or oxygen vacancies, the switching dielectric can potentially enable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6960de0efea73af03512b2cfaa46d9d1
https://doi.org/10.1149/ma2022-0215806mtgabs
https://doi.org/10.1149/ma2022-0215806mtgabs
Autor:
Vineetha Mukundan, Robert D. Clark, Steven Consiglio, Kandabara Tapily, Karsten Beckmann, Alain C. Diebold, Gert J. Leusink, Nathaniel C. Cady
Publikováno v:
MRS Advances. 4:545-551
The recent discovery of ferroelectric behavior in doped hafnia-based dielectrics, attributed to a non-centrosymmetric orthorhombic phase, has potential for use in attractive applications such as negative differential capacitance field-effect-transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e568d0fddcd46a1f6969befd359dbd24
https://doi.org/10.1557/adv.2019.148
https://doi.org/10.1557/adv.2019.148
Autor:
Dina H. Triyoso, K. Tapily, Gert J. Leusink, C. Mart, Steven Consiglio, Wenke Weinreich, C. S. Wajda, Robert D. Clark, Alain C. Diebold, Thomas Kampfe, Vineetha Mukundan
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Ferroelectric and antiferroelectric Hf/Zr-based oxide films have recently gained interest for memory and AI applications due to their promise of low power and CMOS compatibility. As Hf/Zr-based oxides are not ‘new’ materials, this paper will star
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::622c5d683d95e1dfe9f675728d03d2da
https://doi.org/10.1109/vlsi-tsa51926.2021.9440135
https://doi.org/10.1109/vlsi-tsa51926.2021.9440135
Autor:
Kathleen Dunn, Gert J. Leusink, Amber Palka, Angelique Raley, Dina H. Triyoso, Sophia Rogalskyj, Hunter Frost, Robert D. Clark, Cory Wajda, Nicholas Joy
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Metal-insulator-metal (MIM) stacks, though simple in design, are the backbone device for resistive random access memories (ReRAM) and, as such, play a vital role in emerging memory technologies. In this work, we characterize the impact of Ar, Ar/N2,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e532ace427d50b888579c5944e308463
https://doi.org/10.1109/iitc47697.2020.9515603
https://doi.org/10.1109/iitc47697.2020.9515603
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Ru capping process was demonstrated on 48nm-pitch Cu damascene interconnect with area selective deposition technique of Ru CVD. Ru nucleation and film continuity were optimized by process including wet cleaning and dry surface treatments. Physical an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6245b4d156b683ce10e73bba6f51b8f
https://doi.org/10.1109/iitc47697.2020.9515666
https://doi.org/10.1109/iitc47697.2020.9515666
Autor:
Hisashi Higuchi, Christopher Cole, Dina H. Triyoso, Cory Wajda, Sophia Rogalskyj, Gert J. Leusink, Angelique Raley, Steven Consiglio, Danny Newman, Robert D. Clark, Kandabara Tapily, Takahiro Hakamata
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In this work, we presented the Hf-Zr system as a case study of materials that were evaluated in the past and are now receiving renewed interest due to its potential use in artificial intelligence (AI). A historical overview of Hf-Zr research and its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26f8a9a18e72a2ded18f9a9f224c8bab
https://doi.org/10.1109/edtm47692.2020.9117861
https://doi.org/10.1109/edtm47692.2020.9117861
Autor:
Durga Misra, K. Tapily, Gert J. Leusink, Cory Wajda, Robert D. Clark, Yi Ming Ding, S. Consiglio
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:349-354
This paper investigates the p-Ge/Al2O3/ZrO2/TiN gate stacks that were subjected to different slot plane antenna oxidation (SPAO) conditions: 1) prior to any high-k atomic layer deposition (ALD); 2) in between Al2O3 and ZrO2ALD layers; and 3) after th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f025050c172862f83da511e34f114090
https://doi.org/10.1109/tdmr.2017.2681428
https://doi.org/10.1109/tdmr.2017.2681428