Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Gerrit J. Leusink"'
Autor:
Steven Consiglio, Qingyun Yang, K. Tapily, Saraf Iqbal Rashid, Muthumanickam Sankarapandian, Paul C. Jamison, Tsunomura Takaaki, C. Catano, Robert D. Clark, T. Ando, R. Pujari, Vijay Narayanan, Hisashi Higuchi, Gerrit J. Leusink, Malte J. Rasch, R. Soave, Hongwen Yan, Ernest Y. Wu, Dexin Kong, Aelan Mosden, Peter Biolsi, Youngseok Kim, Robert R. Robison, O. van der Straten, D. Koty, S. McDermott, Soon-Cheon Seo, Hiroyuki Miyazoe, Son Nguyen, A. Gasasira, Nicole Saulnier, Wilfried Haensch, Sebastian Engelmann, C. S. Wajda, Ramachandran Muralidhar, S. DeVries
Publikováno v:
IEEE Electron Device Letters. 42:759-762
We demonstrate a novel process for building a Resistive RAM (ReRAM) stack which reduces the forming voltage ( $\text{V}_{\textit {form}}$ ) and increases the switching resistance, both characteristics that are important ingredients for the use of ReR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe9d72aa9eb14d75aff72c197a0ef723
https://doi.org/10.1109/led.2021.3066181
https://doi.org/10.1109/led.2021.3066181
Autor:
K. Tapily, Robert D. Clark, Zheng Wang, Sebastian E. Reyes-Lillo, Kisung Chae, Steven Consiglio, Dina H. Triyoso, Gerrit J. Leusink, Kyeongjae Cho, Josh Kacher, Michael J. Hoffmann, Andrew C. Kummel, Asif Islam Khan, S. F. Lombardo, C.W. Nelson, Mengkun Tian, Nujhat Tasneem
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
Direct, atomic-scale visualization of polarization switching in a functional, polycrystalline, binary oxide via insitu high-resolution transmission electron microscopy (HRTEM) biasing is reported for the first time. Antiferroelectric (AFE) ZrO 2 was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c9e65bf322fd09e97a6858b733db9d6
https://doi.org/10.1109/vlsitechnology18217.2020.9265091
https://doi.org/10.1109/vlsitechnology18217.2020.9265091
Autor:
K. Tapily, Gerrit J. Leusink, K. Yu, Alain C. Diebold, T. Hasegawa, Robert D. Clark, Steven Consiglio, Sonal Dey, C. S. Wajda
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P509-P513
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fd0563e24656e81211ac39a8e83383b
https://doi.org/10.1149/2.0201609jss
https://doi.org/10.1149/2.0201609jss
Electrical Enhancement and Higher-K Engineering in Ultra-Thin Atomic Layer Deposited Hf1-xAlxOyFilms
Autor:
Gerrit J. Leusink, Alain C. Diebold, Steven Consiglio, Robert D. Clark, C. S. Wajda, Relja Vasić, K. Tapily, Jean Jordan-Sweet
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:N1-N5
As Si metal oxide semiconducting field effect transistors have continued to scale, SiO2-based gate dielectrics and polySi gates have beensuccessfullyreplacedbyHfO2-basedhigh-kdielectricsandmetal gates at the 45nm technology node and beyond. In order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::434cec9bd052860eafedaaf818f026e0
https://doi.org/10.1149/2.0051502jss
https://doi.org/10.1149/2.0051502jss
Autor:
Kandabara Tapily, Kai-Hung Yu, Gerrit J. Leusink, Steven Consiglio, Jeffrey Smith, David L. O'Meara, C. S. Wajda, Takahiro Hakamata, Robert D. Clark
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 058203-058203-12 (2018)
This paper presents an overview and perspective on processing technologies required for continued scaling of leading edge and emerging semiconductor devices. We introduce the main drivers and trends affecting future semiconductor device scaling and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::202c19d0aa466c0789a50876037618bf
https://doi.org/10.1063/1.5026805
https://doi.org/10.1063/1.5026805
Autor:
Steven Consiglio, Fumitaka Amano, Kaoru Maekawa, C. S. Wajda, Kai-Hung Yu, Gerrit J. Leusink, T. Hasegawa M. Oie
Publikováno v:
IEEE International Interconnect Technology Conference.
Cu-fill extendability is demonstrated with a novel integration scheme using clustered ALD barrier, CVD Ru liner and PVD Cu dry-fill processes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::094a5ba0fb463c30a143347a4fef185c
https://doi.org/10.1109/iitc.2014.6831857
https://doi.org/10.1109/iitc.2014.6831857
Autor:
Kandabara Tapily, Gerrit J. Leusink, Gennadi Bersuker, Ken Matthews, Chris Hobbs, E. Bersch, V. Kaushik, Paul Kirsch, Robert D. Clark, Cory Wajda, T. Burroughs, David Gilmer, Dmitry Veksler, Richard Hill, S. Vivekanand, T. Ngai, Steven Consiglio
Publikováno v:
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
In this paper, we provide a mechanistic understanding of mobility degradation of gate-last ZrO 2 subjected to medium thermal budget annealing. We find that high-k post deposition anneal (PDA) even at modest temperatures can improve the interfacial la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6d9feafc3641aeaa34451585db87c3f
https://doi.org/10.1109/vlsi-tsa.2014.6839649
https://doi.org/10.1109/vlsi-tsa.2014.6839649
Autor:
Gerrit J. Leusink, K.-W. Ang, Robert D. Clark, Kausik Majumdar, Kandabara Tapily, Chadwin D. Young, Martin Rodgers, Ying Trickett, S. Gausepohl, C. S. Wajda, C.R. Kenney, Paul Kirsch, Ken Matthews, R. Jammy, G. Nakamura, Chris Hobbs, Steven Consiglio
Publikováno v:
2012 International Electron Devices Meeting.
We demonstrate statistically significant data for specific contact resistivity (ρ c ) of sub-10−8Ω-cm2 and sub-2×10−8Ω-cm2 for N-type and P-type Si respectively on 300mm wafer by introducing ultra-thin ALD high-k dielectric layer(s) between t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b84c4d5f2402592c71f4d5a77b7e3f2
https://doi.org/10.1109/iedm.2012.6479068
https://doi.org/10.1109/iedm.2012.6479068
Autor:
G. Nakamura, Steven Consiglio, Nasir Uddin Bhuyian, Kandabara Tapily, Swapnadeep Poddar, Robert D. Clark, Gerrit J. Leusink, C. S. Wajda, Durga Misra
Publikováno v:
Applied Physics Letters. 106:193508
This work evaluates the defects in HfZrO as a function of Zr addition into HfO2 and when the dielectric was subjected to a slot-plane-antenna (SPA) plasma treatment in a cyclic process to form TiN/HfZrO/SiON/Si gate stacks. The defect energy levels,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ee5e2ce8a8582bde207d87181731f5f
https://doi.org/10.1063/1.4921307
https://doi.org/10.1063/1.4921307