Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Gernot Krause"'
Autor:
Stefan Slesazeck, Thomas Mikolajick, Jens Trommer, Talha Chohan, Steffen Lehmann, Gernot Krause
Publikováno v:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Among various device degradation modes, bias temperature instability (BTI) is one of the key reliability concerns. Throughout the years the measurement of true BTI degradation which incorporate fast recovery component is a key focus for the faster ch
Autor:
Gernot Krause, Talha Chohan, Steffen Lehmann, Thomas Mikolajick, Jens Trommer, Germain Bossu, Stefan Slesazeck
The growing interest in high speed and RF technologies assert for the importance of reliability characterization beyond the conventional DC methodology. In this work, the influence of bias temperature instability (BTI) stress on RF small signal param
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e05a571231eba0b59884f6f42c850f0
https://tud.qucosa.de/id/qucosa:79705
https://tud.qucosa.de/id/qucosa:79705
Autor:
Thomas Mikolajick, Talha Chohan, Furqan Mehmood, Gernot Krause, Viktor Havel, Armin Muhlhoff, Jens Trommer, Wafa Arfaoui, Stefan Slesazeck, Germain Bossu
The degradation predicted by classical DC reliability methods, such as bias temperature instability (BTI) and hot carrier injection (HCI), might not translate sufficiently to the AC conditions, which are relevant on the circuit level. The direct anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74ad45b5ce79204a9c710771f143f6c1
https://tud.qucosa.de/id/qucosa:76936
https://tud.qucosa.de/id/qucosa:76936
Autor:
Bin Hu, Markus Hickl, Gernot Krause, Zhou Yang, Ronald M. Gurge, Frank E. Karasz, Paul M. Lahti
Publikováno v:
Polymers for Advanced Technologies. 9:504-510
Autor:
Hans-Jürgen Schaffland, Gernot Krause
Publikováno v:
Praxisformularbuch Gesellschaftsrecht: Schriftsätze-Verträge-Erläuterungen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6a6c67a784cdf14f022c993aa1c056d
https://doi.org/10.1515/9783110310405.641
https://doi.org/10.1515/9783110310405.641
Publikováno v:
2012 IEEE International Integrated Reliability Workshop Final Report.
The influence of different relaxation biases on positive bias temperature instability (PBTI) recovery is investigated. The threshold voltage (V th ) relaxation after stress is found to be accelerated by OFF-state bias in comparison to zero volt recov
Publikováno v:
2009 IEEE International Integrated Reliability Workshop Final Report.
This work shows how fast wafer-level reliability (fWLR) inline tests allow to quickly screen the intrinsic reliability of High-k / Metal Gate (HK/MG) process splits in an effective manner. Various Hf based gate stack compositions such as pure HfO 2 ,