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pro vyhledávání: '"Germanium tetrafluoride"'
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Publikováno v:
Materials Science and Engineering: B. 244:1-5
A «fluoride» method for preparation of germanium isotopes was developed and tested, including two main stages: 1) germanium deposition in the process of plasma chemical hydrogen reduction of germanium tetrafluoride with the subsequent compaction of
Publikováno v:
High Energy Chemistry. 51:56-59
The process of plasma-chemical conversion of germanium tetrafluoride in a radiofrequency discharge (13.56 MHz) has been studied. The dependences of the germanium yield on the specific energy input, the H2/GeF4 molar ratio, and the total pressure have
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Fluorine co-implantation is used in advanced semiconductor device manufacturing for defect engineering, shallow junction formation, and material modification. A common setup for fluorine implantation includes feeding a fluoride dopant source gas into
Autor:
P. G. Sennikov, R. A. Kornev
Publikováno v:
Plasma Chemistry and Plasma Processing. 35:1111-1118
A germanium tetrafluoride conversion into germanium and polyfluorogermanes in hydrogen inductively coupled RF-discharge plasma (13.56 MHz) has been experimentally studied. The product ratio is dependent on specific energy contribution into discharge.
Publikováno v:
Inorganic Materials. 51:718-721
The liquid–vapor separation factors in dilute solutions of methane, ethane, propane, n-butane, and isobutane in germanium tetrafluoride have been determined experimentally at 295 K by statically balancing phases. The measured temperature-dependent
Publikováno v:
Journal of Chemical Physics
Journal of Chemical Physics, American Institute of Physics, 2017, 146 (14), ⟨10.1063/1.4979299⟩
Journal of Chemical Physics, 2017, 146 (14), ⟨10.1063/1.4979299⟩
Journal of Chemical Physics, American Institute of Physics, 2017, 146 (14), ⟨10.1063/1.4979299⟩
Journal of Chemical Physics, 2017, 146 (14), ⟨10.1063/1.4979299⟩
Electron energy loss spectra of carbon tetrafluoride, silicon tetrafluoride, and germanium tetrafluoride molecules (CF4, SiF4, and GeF4) have been measured for incident electron energies of 50-360 eV at 1.5°-15.5° and for 30 eV and 30° scattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1eb6410b1bcb7e3b3cdc82cf2b299493
https://hal.archives-ouvertes.fr/hal-01634259
https://hal.archives-ouvertes.fr/hal-01634259
Autor:
D. A. Pryakhin, Petr G. Sennikov, Leonid Mochalov, Yu. N. Drozdov, Pavel Bulkin, L. V. Gavrilenko, P. Roca i Cabarrocas, Pavel A. Yunin, Boris A. Andreev
Publikováno v:
Thin Solid Films. 552:46-49
Our objective is to study Raman spectra from 74Ge isotope enriched nc-Ge/amorphous-Ge structures, given the expected minimal influence of the matrix on the nanocrystalline phase in the structures with a modified isotope composition. We also assess th
Publikováno v:
RSC Adv.. 4:63817-63823
This paper describes the use of two methodologies to find the electron impact total cross sections (TCS) for GeF4 molecule from 1–5000 eV. The ab initio R-matrix method is used at low impact energies and the spherical complex optical potential (SCO
Autor:
Elías H. Bjarnason, Hiroshi Tanaka, Michael J. Brunger, Oddur Ingólfsson, Frímann H. Ómarsson, Paulo Limão-Vieira, M. Hoshino
Publikováno v:
International Journal of Mass Spectrometry. :45-53
Dissociative electron attachment (DEA) to the group IV tetrafluorides: CF4, SiF4 and GeF4, is reported in the incident electron energy range from about 0 to 14 eV. The F2− formation from CF4 is established and the appearance energies (AEs) for F−