Výsledky vyhledávání - "Germanium nitride"

Study of Growth and Sublimation of Germanium Nitride Using the Concept of Tedmon's Kinetic Model

Autor: Irakli Nakhutsrishvili

Publikováno v: Oriental Journal Of Chemistry. 36:850-854

The paper gives a mathematical model of a thermogravimetric curve for the growth of scale on a metal surface with its simultaneous sublimation is presented and considers the case of the growth-sublimation of scale being preceded by the process of gas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::200265829db8f8b27968762b29d96b7c
https://doi.org/10.13005/ojc/360508

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Electronic Band Transitions in γ-Ge3N4

Autor: Mamoru Kitaura, A. Kanaev, Franck Tessier, Geeth Manthilake, Eduard Feldbach, V. Krasnenko, Luc Museur, Andreas Zerr

Publikováno v: Electronic Materials Letters
Electronic Materials Letters, 2021, 17 (4), pp.315-323. ⟨10.1007/s13391-021-00291-y⟩
Electronic Materials Letters, 2021, 17, pp.315-323. ⟨10.1007/s13391-021-00291-y⟩

This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No 633053. The views and opinions expressed herei

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12d5dccde085626a5764b88324d6e84e
https://hal.archives-ouvertes.fr/hal-03413241/document

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Study of amorphous Zinc Germanium Nitride thin films grown by reactive co-sputtering

Autor: Patrice Miska, Christophe Licitra, Bérangère Hyot, Nicole Beddelem, Névine Rochat

Publikováno v: Journal of Non-Crystalline Solids. 482:132-136

Under its crystalline form, the ZnGeN2 alloy is promising for optoelectronic devices such as LEDs because of its large, direct and adjustable band gap. Nevertheless, data are scarce, more especially for the amorphous form. We report here on the study

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f77b603f187532118b8e98b67f87256a
https://doi.org/10.1016/j.jnoncrysol.2017.12.025

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Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

Autor: F. Caproli, L. Fiorese, Gino Mariotto, Sara Carturan, Marco Giarola, Nicola Pinto, D. R. Napoli, Gianluigi Maggioni

This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputteri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c89214279f08a6661610fa8a1896b69
http://hdl.handle.net/11581/396191

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Seebeck Coefficient Measurements on Micron-Size Single-Crystal Zinc Germanium Nitride Rods

Autor: J. R. Colvin, Jeffrey S. Dyck, Paul C. Quayle, Timothy J. Peshek, Kathleen Kash

Publikováno v: Journal of Electronic Materials. 45:2920-2925

II–IV-nitride compounds are tetrahedrally bonded, heterovalent ternary semiconductors that have recently garnered attention for their potential technological applications. These materials are derived from the parent III-nitride compounds; ZnGeN2 is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71b9db3a42133f1fe68bddea0534781e
https://doi.org/10.1007/s11664-015-4322-3

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Formation of interfaces between a semiconductor-sulfur-transition metal

Publikováno v: Izvestiya of Altai State University; № 4(102) (2018): Известия Алтайского государственного университета; 16-20
Известия Алтайского государственного университета; № 4(102) (2018): Известия Алтайского государственного университета; 16-20

Thermodynamic calculations were carried out under standard conditions of chemical reactions occurring during the sulfide passivation of the surface of elementary semiconductors (Si, Ge), gallium, indium, aluminum (GaN, InN, AlN) nitrides. The sulphid

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5854d495261802a5f71ccdd187fca728
http://izvestiya.asu.ru/article/view/(2018)4-02

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