Investigation of BV dss instability in trench power MOSFET through DLTS, electrical characterization and TCAD simulations

Autor: Ruggeri, Marina, Calenzo, Patrick, Morancho, Frédéric, Masoero, Lia, Germana, Rosalia, Nodari, Alessandro, Monflier, Richard

Publikováno v: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2023, Hong Kong, China. pp.36-39, ⟨10.1109/ISPSD57135.2023.10147489⟩

International audience; In this paper, we investigated the drain to source breakdown voltage (BVdss) instability during avalanche current drain stress of Shielded Gate MOSFET (SG-MOSFET) structure and we propose a new methodology to correlate electri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4074::be3e7d099642af0003a284be1d308cd5
https://hal.laas.fr/hal-04141241